Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1-xZrxO2 for Quantum Computing Applications

被引：1
|
作者：
Hsiang, K. -Y. [1 ,2 ,3 ]
Lee, J. -Y. [1 ,4 ]
Lou, Z. -F. [1 ]
Chang, F. -S. [1 ]
Li, Z. -X. [1 ]
Liu, C. W. [4 ]
Hou, T. -H. [2 ,3 ]
Su, P. [2 ,3 ]
Lee, M. H. [1 ]
机构：
[1] Natl Taiwan Normal Univ, Inst & Undergrad Program Electroopt Engn, Taipei, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[3] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
[4] Natl Taiwan Univ, Grad Sch Adv Technol, Taipei, Taiwan
来源：
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年
关键词：
Endurance; Cryogenic; Ferroelectric; Antiferroelectric;
D O I：
10.1109/IRPS48203.2023.10118311
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf1-xZrxO2 capacitors is investigated for similar to 10(10) cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with similar to 80% normalized switching 2P(r,sw) for t(p) = 1 mu s compared to similar to 60% for the FE capacitor at 80 K.
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页数：4
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