Vacancy-induced tensile strain of CdS/Bi2S3 as a highly performance and robust photocatalyst for hydrogen evolution

被引:16
|
作者
Li, Meng [1 ]
Yao, Huaisuo [1 ]
Yao, Shunyu [1 ]
Chen, Gang [1 ]
Sun, Jingxue [1 ]
机构
[1] Harbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers &, Harbin 150001, Peoples R China
关键词
Sulfur vacancies; Lattice strain; Tensile stress; Energy band structure; Interface barrier; CDS; NANOPARTICLES;
D O I
10.1016/j.jcis.2022.10.056
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lattice strain is a new strategy for promoting photocatalytic activity in order to source more sustainable energy. Vacancy-induced strain is an effective tactic for lattice deformation. Herein, a CdS/Bi2S3 hetero-junction structure containing sulfur vacancies (CdS/Bi2S3-VS) is synthesized by a one-step solvothermal method. When there are sulfur vacancies in the Bi2S3 lattice (Bi2S3-VS), the surrounding atoms move toward sulfur vacancies. This phenomenon lengthens the bonds between surrounding atoms, resulting in tensile stress. Strain engineering adjusts the energy band structure to reduce the interface barrier height, thus effectively improving the interface charge transfer rate. Moreover, density functional theory (DFT) calculations explore the influence of different strain levels on the band structure and Gibbs free energy. The strain-regulated band structure provides a new approach and effectively reduce the interface barrier.(c) 2022 Elsevier Inc. All rights reserved.
引用
收藏
页码:224 / 234
页数:11
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