Strategy for Low Temperature HZO Ferroelectric Capacitors for Back-End of Line Applications

被引：2

作者：

Kim, Jin-Hyun ^{[1
]}

Lee, Minjong ^{[1
]}

Lee, Seojun ^{[1
,2
]}

Jung, Yong Chan ^{[1
]}

Choi, Rino ^{[2
]}

Kim, Hyun Jae ^{[3
]}

Kim, Si Joon ^{[4
]}

Kim, Jiyoung ^{[1
]}

机构：

[1] Univ Texas Dallas, Dallas, TX 75080 USA

[2] Inha Univ, Incheon, South Korea

[3] Yonsei Univ, Seoul, South Korea

[4] Kangwon Natl Univ, Chunchon, South Korea

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

Low temperature; Hf0.5Zr0.5O2; Atomic layer deposition; Ferroelectric; Back-end-of-line;

D O I：

10.1109/EDTM55494.2023.10103066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this report, we discuss methods for obtaining the orthorhombic phase in hafnia-based materials, a necessary condition for the emergence of ferroelectricity. Those methods, including stress engineering with a top electrode, high-pressure annealing, and physical/chemical densification through controlled deposition conditions, can be performed at temperatures suitable for integration into BEOL 3D structures and flexible, wearable technologies. By successfully implementing these techniques, hafnia-based ferroelectric materials can be utilized in a variety of advanced applications.

引用

页数：3

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