Second-Order Transimpedance Amplifiers in Mixer-First Receivers: Design for Optimum Blocker Tolerance

被引:6
|
作者
Shi, Kejian [1 ,2 ]
Abidi, Asad A. [1 ,2 ]
Darabi, Hooman [1 ,2 ]
机构
[1] Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA
[2] Broadcom Inc, San Jose, CA 95134 USA
关键词
Receivers; Mixers; Equivalent circuits; Active filters; Filtering; Baseband; Poles and zeros; Mixer-first receiver; baseband; second-order transimpedance amplifier (TIA); filters; positive feedback; blocker tolerance; linearity; single amplifier biquad (SAB); NOISE-FIGURE; MODEL;
D O I
10.1109/TCSI.2023.3244925
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A design-oriented analysis of a transimpedance amplifier (TIA) reveals the optimum compression-free dynamic range for downconverted blockers lying in its 2(nd)-order tran-sition band. The unique circuit topology is chosen to eliminate low-frequency zeros of the transfer function to TIA output with only one OpAmp. Two approaches lead to TIA designs with or without capacitive positive feedback. Both configurations are analyzed and discussed. Simple and accurate design equations allow the component value to be selected straightforwardly. ?(0 )and Q of the two poles are independently controlled. Analytical expressions for out-of-band (OOB) linearity are derived, explaining different distortion mechanisms from both gate and drain voltages of a FET. The FET gate voltage is shown to affect the distortion even if its swing is much lower than the drain voltage swing. The design fully benefits from 2(nd)-order filtering, yielding optimum blocker tolerance. Power dissipation is limited by the requirements for noise figure and independent pole control. A mixer-first receiver that operates from 1 to 7 GHz is realized on 65 nm RF-SOI CMOS. It displays +31.1 dBm OOB input-referred third-order intercept point (OOB-IIP3), and +11.8 dBm OOB blocker 1-dB compression point (B1dB). The TIA consumes 22 mW. The prototype verifies the TIA design.
引用
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页码:1821 / 1834
页数:14
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