Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation

被引：1
|
作者：
Cai, Guangshuo [1 ]
Mu, Caoyuan [2 ]
Li, Jiaosheng [1 ]
Li, Liuan [2 ]
Cheng, Shaoheng [2 ]
Wang, Qiliang [2 ]
Han, Xiaobiao [3 ]
机构：
[1] Guangdong Polytech Normal Univ, Sch Optoelect Engn, Guangzhou 510665, Peoples R China
[2] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[3] Anhui Univ, Ind Educ Res Inst Adv Mat & Technol Integrated Cir, Hefei 230093, Peoples R China
来源：
MICROMACHINES | 2023年 / 14卷 / 09期
关键词：
diamond; p-n junction diode; junction terminal extension; simulation; LOW ON-RESISTANCE; BREAKDOWN VOLTAGE;
D O I：
10.3390/mi14091667
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance.
引用
收藏
页数：13
相关论文
共 50 条
  • [1] Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension
    Lee, Hyun-Soo
    Zhang, Yuxuan
    Chen, Zhaoying
    Rahman, Mohammad Wahidur
    Zhao, Hongping
    Rajan, Siddharth
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3553 - 3557
  • [2] Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes
    Lin, Wei
    Wang, Maojun
    Yin, Ruiyuan
    Wei, Jin
    Wen, Cheng P.
    Xie, Bing
    Hao, Yilong
    Shen, Bo
    [J]. IEEE ELECTRON DEVICE LETTERS, 2021, 42 (08) : 1124 - 1127
  • [3] A Simple Edge Termination Design for Vertical GaN P-N Diodes
    Pandey, Prakash
    Nelson, Tolen M.
    Collings, William M.
    Hontz, Michael R.
    Georgiev, Daniel G.
    Koehler, Andrew D.
    Anderson, Travis J.
    Gallagher, James C.
    Foster, Geoffrey M.
    Jacobs, Alan
    Ebrish, Mona A.
    Gunning, Brendan P.
    Kaplar, Robert J.
    Hobart, Karl D.
    Khanna, Raghav
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (09) : 5096 - 5103
  • [4] Design and Evaluation of an Educational Simulation for the P-N Junction Diode
    Adam, Gina C.
    Lord, Susan M.
    [J]. 2017 27TH EAEEIE ANNUAL CONFERENCE (EAEEIE), 2017,
  • [5] Solution-processed hybrid p-n junction vertical diode
    Sun, Jia
    Pal, Bhola Nath
    Jung, Byung Jun
    Katz, Howard E.
    [J]. ORGANIC ELECTRONICS, 2009, 10 (01) : 1 - 7
  • [6] In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes
    Leonard, F.
    Dickerson, J. R.
    King, M. P.
    Armstrong, A. M.
    Fischer, A. J.
    Allerman, A. A.
    Kaplar, R. J.
    Talin, A. Alec
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (06) : 766 - 769
  • [7] P-N JUNCTION OF TANTALUM DIODE
    KOMORITA, K
    YAMAGUCH.K
    [J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1965, 48 (08): : 105 - &
  • [8] 1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination
    Xu, Ru
    Chen, Peng
    Liu, Menghan
    Zhou, Jing
    Yang, Yunfei
    Li, Yimeng
    Ge, Cheng
    Peng, Haocheng
    Liu, Bin
    Chen, Dunjun
    Xie, Zili
    Zhang, Rong
    Zheng, Youdou
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 (01) : 316 - 320
  • [9] P-N JUNCTION ELECTROLUMINESCENCE AND DIODE LASERS
    MINDEN, HT
    [J]. IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1965, PMP1 (02): : 40 - &
  • [10] Simulation study of vertical diamond Schottky barrier diode with field plate assisted junction termination extension
    Li, Genzhuang
    Mu, Caoyuan
    Lin, Wang
    Li, Dongshuai
    Lv, Xianyi
    Wang, Qiliang
    Li, Liuan
    Zou, Guangtian
    [J]. MATERIALS TODAY COMMUNICATIONS, 2023, 35
12345