Integration of ternary I-III-VI quantum dots in light-emitting diodes

被引:3
|
作者
Islas-Rodriguez, Nery [1 ]
Munoz, Raybel [2 ]
Rodriguez, Jose A. [2 ]
Vazquez-Garcia, Rosa A. [1 ]
Reyes, Martin [1 ]
机构
[1] Univ Autonoma Estado Hidalgo UAEH, Area Acad Ciencias Tierra & Mat, Pachuca, Hgo, Mexico
[2] Univ Autonoma Estado Hidalgo UAEH, Area Acad Quim, Pachuca, Hidalgo, Mexico
来源
FRONTIERS IN CHEMISTRY | 2023年 / 11卷
关键词
Ternary I-III-VI quantum dots; synthesis methods; physicochemical properties of TQDs; light-emitting diodes; white light-emitting diodes; WHITE-LIGHT; OPTICAL-PROPERTIES; HYDROTHERMAL SYNTHESIS; HOT-INJECTION; CARBON DOTS; NANOCRYSTALS; AGINS2; EFFICIENT; BRIGHT; SIZE;
D O I
10.3389/fchem.2023.1106778
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ternary I-III-VI quantum dots (TQDs) are semiconductor nanomaterials that have been gradually incorporated in the fabrication of light-emitting diodes (LEDs) over the last 10 years due to their physicochemical and photoluminescence properties, such as adequate quantum yield values, tunable wavelength emission, and easy synthesis strategies, but mainly because of their low toxicity that allows them to be excellent candidates to compete with conventional Cd-Pb-based QDs. This review addresses the different strategies to obtain TQDs and how synthesis conditions influence their physicochemical properties, followed by the LEDs parameters achieved using TQDs. The second part of the review summarizes how TQDs are integrated into LEDs and white light-emitting diodes (WLEDs). Furthermore, an insight into the state-of-the-art LEDs development using TQDs, including its advantages and disadvantages and the challenges to overcome, is presented at the end of the review.
引用
收藏
页数:12
相关论文
共 50 条
  • [42] A review on I-III-VI ternary quantum dots for fluorescence detection of heavy metals ions in water: optical properties, synthesis and application
    May, Bambesiwe M.
    Bambo, Mokae F.
    Hosseini, Seyed Saeid
    Sidwaba, Unathi
    Nxumalo, Edward N.
    Mishra, Ajay K.
    RSC ADVANCES, 2022, 12 (18) : 11216 - 11232
  • [43] Light-emitting MXene quantum dots
    Anir S.Sharbirin
    Sophia Akhtar
    Jeongyong Kim
    Opto-ElectronicAdvances, 2021, 4 (03) : 5 - 24
  • [44] Light-emitting MXene quantum dots
    Sharbirin, Anir S.
    Akhtar, Sophia
    Kim, Jeongyong
    OPTO-ELECTRONIC ADVANCES, 2021, 4 (03)
  • [45] In Situ Ligand Compensation of Perovskite Quantum Dots for Efficient Light-Emitting Diodes
    Mei, Xinyi
    Wang, Jianxun
    Zhang, Xiaoyu
    Zhuang, Rongshan
    Hua, Yong
    He, Kege
    Zheng, Weitao
    Zhang, Xiaoliang
    ACS ENERGY LETTERS, 2023, 8 (10) : 4386 - 4396
  • [46] Band gap engineering of amorphous silicon quantum dots for light-emitting diodes
    Park, NM
    Kim, TS
    Park, SJ
    APPLIED PHYSICS LETTERS, 2001, 78 (17) : 2575 - 2577
  • [47] Hybrid YAG/CdSe Quantum Dots Phosphors for White Light-Emitting Diodes
    Chung, Shu-Ru
    Wang, Kuan-Wen
    Wang, Ming-Wei
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (06) : 4358 - 4363
  • [48] Encapsulation of Perovskite Quantum Dots into Paraffin Microcapsules and application on light-emitting diodes
    Yu, Jiadong
    Wu, Kejian
    Tang, Yong
    Li, Zongtao
    Yan, Caiman
    Yu, Shudong
    2020 21ST INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2020,
  • [49] Enhanced Performance of Light-Emitting Diodes by Surface Ligand Modification on Quantum Dots
    Kang, Byoung-Ho
    Lee, Sang-Won
    Lim, Sung-Woo
    Kim, Ju-Seong
    Sai-Anand, Gopalan
    Lee, Seung-Ha
    Kwon, Dae-Hyuk
    Kang, Shin-Won
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (09) : 7169 - 7172
  • [50] Ligand Effects on Photoluminescence and Electroluminescence of Silicon Quantum Dots for Light-Emitting Diodes
    Xu, Yuping
    Terada, Shiho
    Xin, Yunzi
    Ueda, Honoka
    Saitow, Ken-ichi
    ACS APPLIED NANO MATERIALS, 2022, 5 (06) : 7787 - 7797