GiftBTE: an efficient deterministic solver for non-gray phonon Boltzmann transport equation

被引:14
|
作者
Hu, Yue [1 ,2 ]
Jia, Ru [1 ,2 ]
Xu, Jiaxuan [1 ,2 ]
Sheng, Yufei [1 ,2 ]
Wen, Minhua [3 ]
Lin, James [3 ]
Shen, Yongxing [2 ]
Bao, Hua [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Global Inst Future Technol, Shanghai 200240, Peoples R China
[2] Shanghai Jiao Tong Univ, Univ Michigan Shanghai Jiao Tong Univ Joint Inst, Shanghai 200240, Peoples R China
[3] Shanghai Jiao Tong Univ, Ctr High Performance Comp, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
phonon Boltzmann transport equation; submicron thermal transport; discrete ordinates method; open-source package; GAS KINETIC SCHEME; THERMAL TRANSPORT; HEAT-TRANSFER; MULTISCALE SIMULATION; DISSIPATION; CONDUCTION;
D O I
10.1088/1361-648X/acfdea
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Advances in nanotechnology have facilitated the exploration of submicron thermal transport. At this scale, Fourier's law is no longer applicable, and the governing equation for thermal transport is the phonon Boltzmann transport equation (BTE). However, the availability of open-source solvers for the phonon BTE is limited, impeding progress in this field. This study introduces an open-source package, GiftBTE, for numerically solving the non-gray phonon BTE. GiftBTE employs deterministic solutions and provides both steady-state and transient solvers. For the steady-state solver, GiftBTE employs the implicit discrete ordinates method (DOM) with second-order spatial accuracy and the synthetic iterative scheme. For the transient solver, GiftBTE employs the explicit DOM with second-order spatial accuracy. This package demonstrates excellent computational efficiency, enabling realistic three-dimensional simulations of devices and materials. By interfacing with first-principles calculations, this solver enables parameter-free computation of submicron thermal transport. The application of GiftBTE includes, but is not limited to, computing the thermal conductivity of nanostructures, predicting temperature rises in transistors, and simulating laser heating processes.
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页数:19
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