Here we propose a voltage-controlled Fabry-Perot modulator made of two overlapping graphene sheets separated by a hafnium oxide layer, manufactured on a silicon substrate. The applied voltage shifts the Fermi level in both layers thus changing the total surface conductivity. This in turn changes the optical parameters of the system. Due to the architecture of the modulator, approximate to 50% of THz power is absorbed and the applied voltage controls the ratio between the reflection and transmittance. At the resonance frequency of 414 GHz, the transmission through the Fabry-Perot modulator can be doubly reduced in a voltage range of -1.5 to 10 V. In DC measurements, it is revealed that the electrical properties of graphene sheets dramatically depend on the technological process. The proposed multilayer structure can be manufactured on any THz-transparent substrate, compatible with photolithography and atomic layer deposition (ALD) processes. Voltage-controlled surface conductivity could find its application in sensing or modulation of electromagnetic waves.
机构:
Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R ChinaRoyal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Yu, YC
Karlsson, S
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Karlsson, S
Liu, CP
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Liu, CP
Schatz, R
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Schatz, R
Westergren, U
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Westergren, U
Kjebon, O
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Kjebon, O
Chuang, CH
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Chuang, CH
He, SL
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
He, SL
Thylen, L
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Thylen, L
Krysa, AB
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Krysa, AB
Roberts, JS
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China
Roberts, JS
Seeds, AJ
论文数: 0引用数: 0
h-index: 0
机构:Royal Inst Technol, Joint Res Ctr Photon, Hangzhou 310058, Peoples R China