Radiation Defect Formation in a Silicon Carbide Betaconverter

被引：0

作者：

Gurskaya, A. V. ^{[1
]}

Dolgopolov, M. V. ^{[1
,2
]}

Elisov, M. V. ^{[2
]}

Chepurnov, V. I. ^{[2
]}

机构：

[1] Samara State Tech Univ, Samara, Russia

[2] Korolev Natl Res Univ, Samara, Russia

来源：

PHYSICS OF PARTICLES AND NUCLEI LETTERS | 2023年 / 20卷 / 05期

关键词：

D O I：

10.1134/S1547477123050345

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

This paper considers approaches to modeling defects in a semiconductor material using computer calculations, in particular, within the framework of applications that implement density functional theory (DFT). An approach is proposed to study the vacancy mechanism of the mobility of dopant atoms based on the dependence of the binding energy on the impurity fraction. The thermodynamic stability of a semiconductor was studied using the cubic phase of silicon carbide 3C-SiC as an example.

引用

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页码：1094 / 1097

页数：4

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