Influence of Substrate Temperature on Microstructure of Zirconium Silicon Nitride Thin Films Deposited by Reactive Magnetron Sputtering

被引：0
|
作者：
Oliveira, F. S. [1 ]
Dias, I. L. [1 ]
Araujo, P. L. L. [1 ]
Ramirez, D. A. [1 ]
Neto, P. C. Silva [2 ]
Hubler, R. [3 ]
Mendes, F. M. T. [4 ]
Damasceno, I. Z. [5 ]
Tentardini, E. K. [1 ]
机构：
[1] Univ Fed Sergipe, Ave Marechal Rondon S-N, Sao Cristovao, SE, Brazil
[2] Univ Fed Bahia, Escola Politecn, Rua Prof Aristides Novis 02, Salvador, BA, Brazil
[3] Pontificia Univ Catolica Rio Grande Do Sul, Ave Ipiranga 6681, Porto Alegre, RS, Brazil
[4] Inst Nacl Tecnol, Ave Venezuela 82, Rio De Janeiro, RJ, Brazil
[5] Univ Fed Rio Grande Do Norte, Ctr Ciencias Exatas & Terra, Ave Senador Salgado Filho 3000, Natal, RN, Brazil
来源：
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS | 2023年 / 26卷
关键词：
thin films; solid solution; substrate heating; ZrN; reactive magnetron sputtering; MECHANICAL-PROPERTIES; SI ADDITION; NANOCOMPOSITE; COATINGS; ARC; OXIDATION; METALS; ROOM;
D O I：
10.1590/1980-5373-MR-2023-0235
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zr-Si-N thin films were co-deposited by reactive magnetron sputtering to verify the influence of silicon content (1.6 and 8.0 at. % Si) and substrate temperature (room temperature and heated to 973 K) on structure, morphology, chemical bonds and hardness. GAXRD shows a change in grain orientation from (111) to (200) due substrate heating for sample Zr0.984Si0.016N, furthermore, it was not possible to identify any silicon compounds in all deposited samples. SEM-FEG images show greater roughness and surface clusters for sample Zr0.920Si0.080N due to the heat applied on the substrate, with Si3N4 decomposition, influencing thin film hardness. XPS analyses of Si 2p photoelectronic region shows only Si3N4 presence in all samples, proving, in conjunction with other characterization results, the non-formation of substitutional or interstitial solid solution, regardless of substrate heating or silicon content added to ZrN matrix.
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页数：6
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