Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Over the last few years, great advances have been achieved in exploration of high-mobility two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble-transition-metal dichal-cogenide PdSe2. These materials are competitive candidates for constructing next-generation optoelec-tronic devices owing to their unique crystalline and electronic structures. Moreover, the optical and electronic properties of 2D materials can be efficiently modified via precisely engineering their band structures, which is critical for widening specific applications ranging from high-performance opto-electronics to catalysis and energy harvesting. In this review, we focus on the progress in bandgaps engineering of newly emerging high-mobility 2D semiconductors and their applications in optoelec-tronic devices, incorporating our recent study in the InSe and PdSe2 systems. First of all, we discuss the structure-property relationship of typical high-mobility 2D semiconductors (InSe and PdSe2). Next, we analyze several viable strategies for bandgap engineering, including thickness, strain or pressure, alloying, heterostructure, surface modification, intercalation, and so on. Furthermore, we summarize the optoelectronic devices fabricated with such high-mobility 2D semiconductors. The conclusion and outlook in this topic are finally presented. This review aims to provide valuable insights in bandgap engineering of newly emerging 2D semiconductors and explore their potential in future optoelectronic applications.(c) 2022 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).