Light-enhanced electrical behavior of a Au/Al-doped ZnO/p-Si/Al heterostructure: insights from impedance and current-voltage analysis

In this study, we meticulously deposited an Al-doped ZnO nanoparticle thin film on a p-type silicon substrate using the precise sputtering method. We conducted a comprehensive exploration of the film's structure, morphology, and optical properties. X-ray diffraction (XRD) confirmed its polycrystalline wurtzite configuration with a dominant (002) orientation. High-resolution scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed a uniformly textured surface adorned with densely packed nanoparticles. Regarding optical properties, the Al-doped ZnO thin film exhibited exceptional transmittance exceeding 80% across visible and near-infrared spectra. Moving on to electrical characteristics, we assessed the Au/Al-doped ZnO/p-Si/Al heterostructure under dark and illuminated conditions. Through current-voltage (I-V) and impedance measurements, we observed significant improvements in conductivity and performance under illumination. Notably, there was an increase in current conduction and a reduction in impedance, highlighting the advantages of illumination. Collectively, these findings emphasize the promising potential of the Au/Al-doped ZnO/p-Si/Al heterostructure, particularly in the realms of optoelectronic devices and photovoltaics. With its ability to efficiently mobilize charges and adeptly assimilate light, this heterostructure stands as a frontrunner for transformative applications in these technologically vital domains. In this study, we meticulously deposited an Al-doped ZnO nanoparticle thin film on a p-type silicon substrate using the precise sputtering method.