Incorporating formamidinium into 4-fluoro-phenethylammonium based quasi-2D perovskite films and their application in n-i-p perovskite solar cells

被引:2
|
作者
Lu, Shun [1 ]
Li, Kegui [1 ]
Zhen, Ruojing [1 ]
Xiang, Maling [1 ]
Gan, Xiaoyan [1 ]
Guo, Liling [1 ]
Liu, Hanxing [2 ]
机构
[1] Wuhan Univ Technol, Sch Mat Sci & Engn, 122 Luoshi Rd, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol, Int Sch Mat Sci & Engn, 122 Luoshi Rd, Wuhan 430070, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic-inorganic perovskites; Two-dimensional; 4-fluoro-phenethylammonium; Formamidinium; Vertical orientation; n -i -p structure; HIGH-EFFICIENCY; PERFORMANCE;
D O I
10.1016/j.optmat.2023.113453
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, perovskite solar cells (PSCs) basing on quasi-two-dimensional (quasi-2D) perovskites with hydrophobic bulky organic cations have received a lot of interests owing to their superior moisture stability. While quasi-2D perovskites have achieved great success in planar p-i-n PSCs, their application in planar n-i-p devices and the corresponding efficiencies lag far behind. In our work, (FPEA)2(MA)4Pb5I16 perovskite films with high crystal-linity, compact and smooth surface were deposited on electron transport layer with NH4SCN as an additive. Formamidinium (FA+) were then incorporated into the FPEA based perovskite films to partially replace meth-ylammonium (MA+), and effects of FA+ on the film's vertical orientation, light absorption capacity, carrier lifetime, defect density and electron mobility were studied. It was found that when molar ratio of FA/MA = 0.5/ 9.5, the film had the highest vertical orientation, enhanced light absorption, less carrier recombination loss. The obtained (FPEA)2(FA0.05MA0.95)4Pb5I16 based n-i-p PSCs gave a maximum efficiency of 12.17% under standard illumination, retaining 83% of the initial efficiency after stored in air environment (25-30 degrees C) with 40 +/- 5% RH for 1080 h. The results demonstrate an efficient approach to prepare high-quality quasi-2D perovskite films in a n-i-p structure as well as improved device efficiency and stability.
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页数:8
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