Room-Temperature Polarized Light-Emitting Diode-Based on a 2D Monolayer Semiconductor

被引:6
|
作者
Shi, Xiuqi [1 ,2 ]
Li, Wenfei [1 ,2 ]
Lan, Xinhui [1 ,2 ]
Guo, Qianqian [1 ,2 ]
Zhu, Guangpeng [1 ,2 ]
Du, Wei [1 ,2 ]
Wang, Tao [1 ,2 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[2] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
2D semiconductors; polarized light-emitting diodes; plasmonic nanocavities; ELECTROLUMINESCENCE; EMISSION;
D O I
10.1002/smll.202301949
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transition metal dichalcogenide (TMD)-based 2D monolayer semiconductors, with the direct bandgap and the large exciton binding energy, are widely studied to develop miniaturized optoelectronic devices, e.g., nanoscale light-emitting diodes (LEDs). However, in terms of polarization control, it is still quite challenging to realize polarized electroluminescence (EL) from TMD monolayers, especially at room temperature. Here, by using Ag nanowire top electrode, polarized LEDs are demonstrated based on 2D monolayer semiconductors (WSe2, MoSe2, and WS2) at room temperature with a degree of polarization (DoP) ranging from 50% to 63%. The highly anisotropic EL emission comes from the 2D/Ag interface via the electron/hole injection and recombination process, where the EL emission is also enhanced by the polarization-dependent plasmonic resonance of the Ag nanowire. These findings introduce new insights into the design of polarized 2D LED devices at room temperature and may promote the development of miniaturized 2D optoelectronic devices.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] A GaAs polariton light-emitting diode operating near room temperature
    Tsintzos, S. I.
    Pelekanos, N. T.
    Konstantinidis, G.
    Hatzopoulos, Z.
    Savvidis, P. G.
    NATURE, 2008, 453 (7193) : 372 - 375
  • [42] A GaAs polariton light-emitting diode operating near room temperature
    S. I. Tsintzos
    N. T. Pelekanos
    G. Konstantinidis
    Z. Hatzopoulos
    P. G. Savvidis
    Nature, 2008, 453 : 372 - 375
  • [43] Room Temperature GaN-Based Edge-Emitting Spin-Polarized Light Emitting Diode
    Bhattacharya, Aniruddha
    Baten, Md Zunaid
    Frost, Thomas
    Bhattacharya, Pallab
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 29 (03) : 338 - 341
  • [44] An optode membrane for determination of gold using a simple light-emitting diode-based device
    Sorouraddin, Mohammad-Hossein
    Saadati, Masoud
    Aghaei, Ayyoub
    MONATSHEFTE FUR CHEMIE, 2011, 142 (05): : 439 - 445
  • [45] Light-Emitting Diode-Based Photodynamic Therapy for Photoaging, Scars, and Dyspigmentation: A Systematic Review
    Huang, Alisen
    Nguyen, Julie K.
    Jagdeo, Jared
    DERMATOLOGIC SURGERY, 2020, 46 (11) : 1388 - 1394
  • [46] Towards realization of a large-area light-emitting diode-based solar simulator
    Hamadani, B. H.
    Chua, K.
    Roller, J.
    Bennahmias, M. J.
    Campbell, B.
    Yoon, H. W.
    Dougherty, B.
    PROGRESS IN PHOTOVOLTAICS, 2013, 21 (04): : 779 - 789
  • [47] Spin-polarized light-emitting diode using metal/insulator/semiconductor structures
    Manago, T
    Akinaga, H
    APPLIED PHYSICS LETTERS, 2002, 81 (04) : 694 - 696
  • [48] Spectral matching technology for light-emitting diode-based jaundice photodynamic therapy device
    Gan, Ru-ting
    Guo, Zhen-ning
    Lin, Jie-ben
    JOURNAL OF MODERN OPTICS, 2015, 62 (03) : 212 - 217
  • [49] Accuracy of the reflectance spectrum recovery in a light-emitting diode-based multispectral imaging system
    Fauch, Laure
    Nippolainen, Ervin
    Kamshilin, Alexei A.
    OPTICAL ENGINEERING, 2012, 51 (05)
  • [50] Light-emitting diode-based multiwavelength diffuse optical tomography system guided by ultrasound
    Yuan, Guangqian
    Alqasemi, Umar
    Chen, Aaron
    Yang, Yi
    Zhu, Quing
    JOURNAL OF BIOMEDICAL OPTICS, 2014, 19 (12)