Electronic Synaptic Devices with High Thermostability Induced by Embedded Tungsten Disulfide Quantum Dots for Machine Learning

被引:0
|
作者
An, Haoqun [1 ]
An, Jun Seop [1 ]
Li, Mingjun [1 ]
Kim, Youngjin [1 ]
Kim, Tae Whan [1 ]
机构
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
high thermal stability; quantum confinement effect; synaptic devices; tunneling current; WS2 quantum dots; CHARGE-LIMITED CURRENTS; TRANSITION; CONDUCTION; INSULATOR;
D O I
10.1002/aelm.202200876
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
If the speed of machine learning is to be improved, devices and systems with strong resistances to various types of internal noise, mainly internal thermal noise, are urgently needed. The successful demonstration of a synaptic device is reported based on a polyimide-tungsten disulfide quantum dot (PI-WS2 QD) nanocomposite that continued to operate normally after simultaneous exposure of a high temperature of 100 degrees C. Such excellent performance is attributable to the strong quantum confinement effect of WS2 QDs. The working current of the device and its power consumption are on the orders of nanoamperes and femtojoules, respectively. Undoubtedly, such devices will significantly improve the physical performances of machine learning systems and allow the rapid realization of greatly improving machine learning speed.
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页数:8
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