Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

被引:0
|
作者
机构
[1] Nakaoka, T.
[2] Kakitsuka, T.
[3] Saito, T.
[4] Kako, S.
[5] Ishida, S.
[6] Nishioka, M.
[7] Yoshikuni, Y.
[8] 1,Arakawa, Y.
来源
Nakaoka, T. (nakaoka@iis.u-tokyo.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [1] Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures
    Nakaoka, T
    Kakitsuka, T
    Saito, T
    Kako, S
    Ishida, S
    Nishioka, M
    Yoshikuni, Y
    Arakawa, Y
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6812 - 6817
  • [3] Estimation of the location of embedded InGaAs/GaAs quantum dots by measuring strain-induced blueshift of photoluminescence
    Xu, Lixia
    Arai, Yoshio
    Ozasa, Kazunari
    Kakoi, Hiroki
    Liang, Yuan-Hua
    Araki, Wakako
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (09): : 2441 - 2445
  • [4] Recombination processes in strain-induced InGaAs quantum dots.
    Sandmann, J
    Grosse, S
    Feldmann, J
    Lipsanen, H
    Sopanen, M
    Tulkki, J
    Ahopelto, J
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1699 - 1703
  • [5] Confinement effects in strain-induced InGaAs/GaAs quantum dots
    Ren, HW
    Nair, SV
    Lee, JS
    Sugou, S
    Okuno, T
    Nishbayashi, K
    Masumoto, Y
    PHYSICA E, 2000, 7 (3-4): : 403 - 407
  • [6] Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures
    Ma, Zhixun
    Holden, Todd
    Wang, Zhiming M.
    Salamo, Gregory J.
    Malikova, Lyudmila
    Mao, Samuel S.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)
  • [7] Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures
    Ma, Zhixun
    Holden, Todd
    Wang, Zhiming M.
    Salamo, Gregory J.
    Malikova, Lyudmila
    Mao, Samuel S.
    Journal of Applied Physics, 2007, 101 (04):
  • [8] Spectroscopic signature of strain-induced quantum dots created by buried InAs quantum dots in an InGaAs quantum well
    Mazur, Yu. I.
    Dorogan, V. G.
    Marega, E., Jr.
    Tarasov, G. G.
    Salamo, G. J.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (05)
  • [9] Slow relaxation of excited states in strain-induced quantum dots
    Gfroerer, TH
    Sturge, MD
    Kash, K
    Yater, JA
    Plaut, AS
    Lin, PSD
    Florez, LT
    Harbison, JP
    Das, SR
    Lebrun, L
    PHYSICAL REVIEW B, 1996, 53 (24): : 16474 - 16480
  • [10] Strain-induced g-factor tuning in single InGaAs/GaAs quantum dots
    Tholen, H. M. G. A.
    Wildmann, J. S.
    Rastelli, A.
    Trotta, R.
    Pryor, C. E.
    Zallo, E.
    Schmidt, O. G.
    Koenraad, P. M.
    Silov, A. Yu
    PHYSICAL REVIEW B, 2016, 94 (24)