Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

被引:0
|
作者
机构
[1] Nakaoka, T.
[2] Kakitsuka, T.
[3] Saito, T.
[4] Kako, S.
[5] Ishida, S.
[6] Nishioka, M.
[7] Yoshikuni, Y.
[8] 1,Arakawa, Y.
来源
Nakaoka, T. (nakaoka@iis.u-tokyo.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [31] Spectroscopy and mechanical modification of single strain-induced quantum dots
    Bracker, AS
    Tischler, JG
    Gammon, D
    Nosho, BZ
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (01): : 133 - 137
  • [32] Strain-induced material intermixing of InAs quantum dots in GaAs
    Lipinski, MO
    Schuler, H
    Schmidt, OG
    Eberl, K
    Jin-Phillipp, NY
    APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1789 - 1791
  • [33] Strain-induced localized states within the matrix continuum of self-assembled quantum dots
    Popescu, Voicu
    Bester, Gabriel
    Zunger, Alex
    APPLIED PHYSICS LETTERS, 2009, 95 (02)
  • [34] Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
    Obermüller, C
    Deisenrieder, A
    Abstreiter, G
    Karrai, K
    Grosse, S
    Manus, S
    Feldmann, J
    Lipsanen, H
    Sopanen, M
    Ahopelto, J
    APPLIED PHYSICS LETTERS, 1999, 75 (03) : 358 - 360
  • [35] Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots
    Koskenvaara, H
    Hakkarainen, T
    Lipsanen, H
    Sopanen, M
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (5-7) : 357 - 360
  • [36] Carrier-carrier correlations in strain-induced quantum dots
    Braskén, M
    Lindberg, M
    Sundholm, D
    Olsen, J
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 221 (01): : 37 - 41
  • [37] Charge-separated state in strain-induced quantum dots
    Gu, Y
    Sturge, MD
    Kash, K
    Watkins, N
    VanderGaag, BP
    Gozdz, AS
    Florez, LT
    Harbison, JP
    APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1733 - 1735
  • [38] Temperature dependence of carrier relaxation in strain-induced quantum dots
    Braskén, M
    Lindberg, M
    Sopanen, M
    Lipsanen, H
    Tulkki, J
    PHYSICAL REVIEW B, 1998, 58 (24): : 15993 - 15996
  • [39] Formation of strain-induced quantum dots in gated semiconductor nanostructures
    Thorbeck, Ted
    Zimmerman, Neil M.
    AIP ADVANCES, 2015, 5 (08):
  • [40] Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots
    H. Koskenvaara
    T. Hakkarainen
    H. Lipsanen
    M. Sopanen
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 357 - 360