A full spectrum of computing-in-memory technologies

被引:43
|
作者
Sun, Zhong [1 ]
Kvatinsky, Shahar [2 ]
Si, Xin [3 ]
Mehonic, Adnan [4 ]
Cai, Yimao [1 ]
Huang, Ru [1 ]
机构
[1] Peking Univ, Inst Artificial Intelligence, Beijing Adv Innovat Ctr Integrated Circuits, Sch Integrated Circuits, Beijing, Peoples R China
[2] Technion Israel Inst Technol, Andrew & Erna Viterbi Fac Elect & Comp Engn, Haifa, Israel
[3] Southeast Univ, Dept Elect Engn, Nanjing, Peoples R China
[4] UCL, Dept Elect & Elect Engn, London, England
基金
中国国家自然科学基金;
关键词
CONTENT-ADDRESSABLE MEMORY; SRAM; LOGIC; MACRO; CMOS; CELL; COMPUTATION; OPERATION; DESIGN; TRENDS;
D O I
10.1038/s41928-023-01053-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to provide sustainable improvements in computing throughput and energy efficiency. Underlying the different CIM schemes is the implementation of two kinds of computing primitive: logic gates and multiply-accumulate operations. Considering the input and output in either operation, CIM technologies differ in regard to how memory cells participate in the computation process. This complexity makes it difficult to build a comprehensive understanding of CIM technologies. Here, we provide a full-spectrum classification of all CIM technologies by identifying the degree of memory cells participating in the computation as inputs and/or output. We elucidate detailed principles for standard CIM technologies across this spectrum, and provide a platform for comparing the advantages and disadvantages of each of the different technologies. Our taxonomy could also potentially be used to develop other CIM schemes by applying the spectrum to different memory devices and computing primitives. This Review provides a full-spectrum classification of computing-in-memory technologies by identifying the degree of memory cells participating in the computation as inputs and/or output, creating a platform for comparing the advantages and disadvantages of each of the different technologies.
引用
收藏
页码:823 / 835
页数:13
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