Enhanced Photoelectrochemical Activity Realized from WS2 Thin Films Prepared by RF-Magnetron Sputtering for Water Splitting

被引:5
|
作者
Ladhane, Somnath [1 ]
Shah, Shruti [1 ]
Shinde, Pratibha [1 ]
Punde, Ashvini [1 ]
Waghmare, Ashish [1 ]
Hase, Yogesh [1 ]
Bade, Bharat R. [1 ]
Doiphode, Vidya [1 ]
Rahane, Swati N. [1 ]
Kale, Dhanashri [1 ]
Rondiya, Sachin R. [2 ]
Prasad, Mohit [3 ]
Patole, Shashikant P. [4 ]
Jadkar, Sandesh R. [1 ]
机构
[1] Savitribai Phule Pune Univ, Dept Phys, Ganeshkhind Rd, Pune 411?007, India
[2] Indian Inst Sci, Dept Mat Engn, Bengaluru 560?012, India
[3] Pimpri Chinchwad Coll Engn PCCOE, Dept Appl Sci & Humanities, Pune 411004, India
[4] Khalifa Univ Sci & Technol, Dept Phys, Abu Dhabi 127788, U Arab Emirates
关键词
WS2 thin films; RF-magnetron sputtering; Nanostructures; Photoelectrochemical activity; PHYSICAL-PROPERTIES; MOS2; HETEROJUNCTION; EVOLUTION; SEMICONDUCTOR; NANOSHEETS; EFFICIENT;
D O I
10.1002/celc.202400002
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We report the synthesis of tungsten sulfide (WS2) films using RF-magnetron sputtering at different RF powers. X-ray diffraction (XRD) data confirm the hexagonal crystal structure of WS2 with an average crystallite size of similar to 44.54 & Aring;. With increased RF power, the preferred orientation of WS2 crystallites shifts from (002) to (100). Linear sweep voltammetry (LSV) was used to assess the Photoelectrochemical (PEC) activity of WS2 films. The film deposited at 150 W demonstrated the highest photocurrent density of 5.44 mA/cm(2). The 150 W film also showed a lower Tafel slope of similar to 0.374 V/decade, indicating superior PEC activity. Mott Schottky's (MS) analysis revealed a notable shift in the flat band potential towards the negative side, suggesting a shifting of the Fermi level towards the conduction band. WS2 film grown at 150 W demonstrated a majority charge carrier density of 6.2x10(21) cm(-3) and a depletion layer width of 1.54 nm. The observed low charge transfer resistance of 155 Omega contributed to the enhanced PEC activity with a relaxation time constant of 37 ms. These properties suggest that WS2 can be suitable for PEC water splitting.
引用
收藏
页数:13
相关论文
共 50 条
  • [1] Direct growth of WS2 nanosheets using RF-magnetron sputtering on hydrothermally grown TiO2 nanorods for enhancing photoelectrochemical water splitting
    Ladhane, Somnath
    Shah, Shruti
    Doiphode, Vidya
    Shinde, Pratibha
    Punde, Ashvini
    Kale, Dhanashri
    Rahane, Swati
    Thombare, Jyoti
    Hase, Yogesh
    Waghmare, Ashish
    Bade, Bharat
    Prasad, Mohit
    Patole, Shashikant P.
    Jadkar, Sandesh
    MATERIALS CHEMISTRY AND PHYSICS, 2025, 334
  • [2] STRUCTURE OF INDIUM NITRIDE THIN FILMS PREPARED BY RF-MAGNETRON SPUTTERING
    Nakane, Y.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1996, 52 : C469 - C469
  • [3] Properties of WS2 Films Prepared by Magnetron Sputtering from a Nanostructured Target
    Irtegov, Y.
    An, V.
    Vinatier, P.
    Sochugov, N.
    Zakharov, A.
    NANOMATERIALS FOR STRUCTURAL, FUNCTIONAL AND BIOMEDICAL APPLICATIONS, 2014, 872 : 197 - +
  • [4] SBTN thin film capacitors prepared by RF-magnetron sputtering
    Sun, S
    Fox, GR
    Hadnagy, TD
    INTEGRATED FERROELECTRICS, 1999, 26 (1-4) : 733 - 739
  • [5] Highly (110)-oriented potassium niobate thin films prepared by RF-magnetron sputtering
    Kakio, Shoji
    Suzuki, Tatsunori
    Kurosawa, Hajime
    Nakagawa, Yasuhiko
    2007 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1-6, 2007, : 1405 - 1408
  • [6] Properties of Li-Doped NiO Thin Films Prepared by RF-Magnetron Sputtering
    Kwon, Ho-Beom
    Han, Joo-Hwan
    Lee, Hee Young
    Lee, Jai-Yeoul
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (02) : 1517 - 1520
  • [7] Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
    Vilcarromero, J.
    Bustamante, R.
    da Silva, J. H. D.
    BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (3B) : 1035 - 1037
  • [8] Characterization of PZT Ferroelectric Thin Films by RF-magnetron Sputtering
    Bi, Zhenxing
    Zhang, Zhisheng
    Fan, Panfeng
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, 61 : 120 - 124
  • [9] SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING
    Li, Wenhao
    SURFACE REVIEW AND LETTERS, 2018, 25 (02)