Core-shell nanowire heterostructure is a new architecture for photodetector application with enlarged active surface area enhancing light absorption and photodetector performance. As an emanating coating material, SnS2 has a growing interest in next-generation optoelectronic materials. Here, we reported the enhanced optoelectronic performance of the hydrothermally grown SnS2 and Si nanowire (SiNWs) core-shell heterostructure. Hydrothermally grown SnS2 on Si nanowire creates a uniform coating over the entire surface of nanowires which enhances the heterostructure's effective junction area and improves optoelectronic performance over the broad spectral range (300 - 1100 nm). Specially, under 340 nm illumination, the core-shell photodetector exhibits large responsivity (-383 A/W) and extremely high external quantum efficiency (-2 x 105 %) at very low optical power (-20 nW/mm2). This SnS2/SiNWs core-shell heterostructure with significantly improved optoelectronic performance will be favourable for the development of photodetector with an ability to work with extremely high efficiency.
机构:
Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Xie, Jian
Zhang, Haiyan
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Zhang, Haiyan
Chu, Junwei
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Zhejiang Dongjing Bright Opto Co Ltd, Jinhua 321016, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Chu, Junwei
Shen, Wei
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Hebei Normal Univ, Inst Nihewan Archaeol, Shijiazhuang 050024, Hebei, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Shen, Wei
Chen, Rong
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
Chen, Rong
Yu, Jiale
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Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R ChinaGuangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
机构:
Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Shanghai Key Lab D&A Metal Funct Mat, Shanghai 201804, Peoples R ChinaTongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Geng, Kaijie
Xie, Yuye
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Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Shanghai Key Lab D&A Metal Funct Mat, Shanghai 201804, Peoples R ChinaTongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Xie, Yuye
Yan, Liang
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Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Shanghai Key Lab D&A Metal Funct Mat, Shanghai 201804, Peoples R ChinaTongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Yan, Liang
Yan, Biao
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Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
Shanghai Key Lab D&A Metal Funct Mat, Shanghai 201804, Peoples R ChinaTongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, Wenjia
Du, Ning
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Du, Ning
Zhang, Hui
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, Hui
Yang, Deren
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China