Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy

被引：0

作者：

Wang, Ying-Chieh ^{[1
]}

Lo, Ikai ^{[2
]}

Lin, Yu-Chung ^{[2
]}

Tsai, Cheng-Da ^{[2
]}

Chang, Ting-Chang ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

来源：

CRYSTALS | 2023年 / 13卷 / 06期

关键词：

p-type GaN; molecular beam epitaxy; doping; Hall effect; SEMICONDUCTORS; SCATTERING; GROWTH; MODES; FILMS; BLUE;

D O I：

10.3390/cryst13060907

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the N/Ga flux ratio was studied. The highest p-type carrier concentration in this series was 3.12 x 10(18) cm(-3) under the most N-rich condition. By modulating the shutters of different effusion cells for the shutter-controlled process, a wide growth window for p-type GaN was obtained. It was found that the presence of Mg flux effectively prevents the formation of structural defects in GaN epi-layers, resulting in the improvement of crystal quality and carrier mobility.

引用

页数：11

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