We calculate optical conductivity for bilayer dice lattices in commensurate vertically aligned stackings. The interband optical conductivity reveals a rich activation behavior unique for each of the four stackings. We found that the intermediate energy band, which corresponds to the flat band of a single-layer dice lattice, plays a different role for different stackings. The interband selection rules, which are crucial for the single-layer lattice, may become lifted in bilayer lattices. The results for effective and tight-binding models are found to be in qualitative agreement for some of the stackings and the reasons for the discrepancies for others are identified. Our findings propose optical conductivity as an effective tool to distinguish between different stackings in bilayer dice lattices.
机构:
Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Camacho-Guardian, A.
Paredes, R.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
机构:
Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
Univ Michigan, Appl Phys Program, Ann Arbor, MI 48109 USAUniv Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
Chang, You-Chia
Liu, Chang-Hua
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Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USAUniv Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
Liu, Chang-Hua
Liu, Che-Hung
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Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USAUniv Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
Liu, Che-Hung
Zhong, Zhaohui
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Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USAUniv Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
Zhong, Zhaohui
Norris, Theodore B.
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Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
Univ Michigan, Appl Phys Program, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USAUniv Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
机构:
Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Camacho-Guardian, A.
Dominguez-Castro, G. A.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
Dominguez-Castro, G. A.
Paredes, R.
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Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, MexicoUniv Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico
机构:
Adam Mickiewicz Univ, Solid State Theory Div, Fac Phys, PL-61614 Poznan, PolandAdam Mickiewicz Univ, Solid State Theory Div, Fac Phys, PL-61614 Poznan, Poland
Sajna, A. S.
Polak, T. P.
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Adam Mickiewicz Univ, Solid State Theory Div, Fac Phys, PL-61614 Poznan, PolandAdam Mickiewicz Univ, Solid State Theory Div, Fac Phys, PL-61614 Poznan, Poland
Polak, T. P.
Micnas, R.
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Adam Mickiewicz Univ, Solid State Theory Div, Fac Phys, PL-61614 Poznan, PolandAdam Mickiewicz Univ, Solid State Theory Div, Fac Phys, PL-61614 Poznan, Poland
机构:
Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Natl High Magnet Field Lab, Tallahassee, FL 32310 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Cui, Songbin
Jiang, Chengxin
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Jiang, Chengxin
Zhan, Zhen
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Wuhan Univ, Key Lab Artificial Microand Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
IMDEA Nanosci, Faraday 9, Madrid 28049, SpainFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Zhan, Zhen
Wilson, Ty
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Natl High Magnet Field Lab, Tallahassee, FL 32310 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Wilson, Ty
Zhang, Naipeng
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Natl High Magnet Field Lab, Tallahassee, FL 32310 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Zhang, Naipeng
Xie, Xiaoming
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Xie, Xiaoming
Yuan, Shengjun
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Wuhan Univ, Key Lab Artificial Microand Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
Wuhan Inst Quantum Technol, Wuhan 430206, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Yuan, Shengjun
Wang, Haomin
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Wang, Haomin
Lewandowski, Cyprian
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Natl High Magnet Field Lab, Tallahassee, FL 32310 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Lewandowski, Cyprian
Ni, Guangxin
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Natl High Magnet Field Lab, Tallahassee, FL 32310 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA