Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

被引：0

作者：

Niu, Yunfan ^{[1
]}

Mo, Jiarui ^{[1
]}

May, Alexander ^{[2
]}

Rommel, Mathias ^{[2
]}

Rossi, Chiara ^{[2
]}

Romijn, Joost ^{[1
]}

Zhang, Guoqi ^{[1
]}

Vollebregt, Sten ^{[1
]}

机构：

[1] Delft Univ Technol, Dept Microelect, Delft, Netherlands

[2] Fraunhofer Inst Integrated Syst & Device Technol, Erlangen, Germany

来源：

2023 IEEE SENSORS | 2023年

基金：

欧盟地平线“2020”;

关键词：

silicon carbide; analog-to-digital converter; harsh-enviromnent;

D O I：

10.1109/SENSORS56945.2023.10325061

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.

引用

页数：4

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