Simulation of photon-generated carrier transport characteristics in CdSe quantum dot thin films

被引：1
|
作者：
Zheng, Fuzhong [1 ,2 ]
Zhu, Hongbing [1 ]
Huang, Yong [2 ]
Jin, Xiaozhao [1 ]
Huang, Danping [2 ]
Wu, Ying [3 ]
Liu, Jiajia [1 ]
机构：
[1] Chengdu Univ Informat Technol, Sch Automat, Chengdu 610225, Peoples R China
[2] Sichuan Univ Sci & Engn, Coll Mech Engn, Zigong 643000, Peoples R China
[3] Chongqing Univ Sci & Technol, Sch Intelligent Technol & Engn, Chongqing 401331, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS C | 2023年 / 34卷 / 12期
关键词：
Quantum dot; PDE module; hopping model; TOF; SOLAR-CELLS; MOBILITY;
D O I：
10.1142/S012918312350167X
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Studying the transport characteristics of carriers in quantum dot (QD) film provides theory support for the structure design and performance improvement of QD film device. However, time of flight experiment can only test the global optoelectric current signal brought by the carrier transport, and cannot analyze the carrier transport in the transport layer. Here, the hopping transport model of photogenerated carriers in QD films was established to study the expansion and drift movement of carriers in the PDE module of COMSOL. According to the material properties of the actual QD films, the carrier transport in single-size QD films was studied.
引用
收藏
页数：13
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