A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications

被引:0
|
作者
Mirbeik, Amir [1 ]
Najafizadeh, Laleh [2 ]
Ebadi, Negar [3 ,4 ]
机构
[1] RadioSight LLC, Hoboken, NJ 07030 USA
[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
[3] Stevens Inst Technol, Dept Elect & Comp Engn, Hoboken, NJ 07030 USA
[4] Stanford Univ, Sch Med, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
millimeter-wave imaging; transceiver; circuit; biomedical imaging; ultra-wideband; CMOS; ON-CHIP ANTENNAS; RADIATOR;
D O I
10.3390/mi14112031
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this work, we present a transceiver front-end in SiGe BiCMOS technology that can provide an ultra-wide bandwidth of 100 GHz at millimeter-wave frequencies. The front-end utilizes an innovative arrangement to efficiently distribute broadband-generated pulses and coherently combine received pulses with minimal loss. This leads to the realization of a fully integrated ultra-high-resolution imaging chip for biomedical applications. We realized an ultra-wide imaging band-width of 100 GHz via the integration of two adjacent disjointed frequency sub-bands of 10-50 GHz and 50-110 GHz. The transceiver front-end is capable of both transmit (TX) and receive (RX) operations. This is a crucial component for a system that can be expanded by repeating a single unit cell in both the horizontal and vertical directions. The imaging elements were designed and fabricated in Global Foundry 130-nm SiGe 8XP process technology.
引用
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页数:12
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