Investigating the thermal robustness of soliton crystal microcombs

被引:2
|
作者
Murray, Caitlin e. [1 ,2 ]
Tan, Mengxi [2 ,3 ]
Prayoonyong, Chawaphon [1 ,2 ]
Zhu, Xiaotian [4 ]
Chu, Sai t. [4 ]
Little, Brent e. [5 ]
Morandotti, Roberto [6 ]
Mitchell, Arnan [2 ]
Moss, David j. [7 ]
Corcoran, Bill [1 ,2 ]
机构
[1] Monash Univ, Dept Elect & Comp Syst, Photon Commun Lab, Clayton, Vic, Australia
[2] Integrated Photon & Applicat Ctr InPAC, Melbourne, Vic, Australia
[3] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China
[4] City Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
[5] QXP Technol Inc, Xian, Peoples R China
[6] INRS Energie Mat & Telecommun, Varennes, PQ, Canada
[7] Swinburne Univ Technol, Opt Sci Ctr, Hawthorn, Vic, Australia
基金
澳大利亚研究理事会;
关键词
FREQUENCY COMB; SILICON-NITRIDE; GENERATION; MICRORESONATORS;
D O I
10.1364/OE.503072
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Soliton crystals are a novel form of microcomb, with relatively high conversion efficiency, good thermal robustness, and simple initiation among the methods to generate them. Soliton crystals can be easily generated in microring resonators with an appropriate mode-crossing. However, fabrication defects can significantly affect the mode-crossing placement and strength in devices. To enable soliton crystal states to be harnessed for a broader range of microcomb applications, we need a better understanding of the link between mode-crossing properties and the desired soliton crystal properties. Here, we investigate how to generate the same soliton crystal state in two different microrings, how changes in microring temperature change the mode-crossing properties, and how mode-crossing properties affect the generation of our desired soliton crystal state. We find that temperature affects the mode-crossing position in these rings but without major changes in the mode-crossing strength. We find that our wanted state can be generated over a device temperature range of 25 degrees C, with different mode-crossing properties, and is insensitive to the precise mode-crossing position between resonances.
引用
收藏
页码:37749 / 37762
页数:14
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