Insights on CaTiS3 films grown by pulsed laser deposition

被引：2
|
作者：
Fix, T. [1 ,2 ]
Raissi, S. [1 ,2 ]
Muller, D. [1 ,2 ]
Bouillet, C. [3 ,4 ]
Preziosi, D. [3 ,4 ]
Slaoui, A. [1 ,2 ]
机构：
[1] CNRS, ICube Lab, 23 rue Loess, F-67037 Strasbourg, France
[2] Univ Strasbourg, 23 rue Loess, F-67037 Strasbourg, France
[3] CNRS, Inst Phys & Chim Mat Strasbourg IPCMS, UMR 7504, 23 rue Loess,BP 43, F-67034 Strasbourg 2, France
[4] Univ Strasbourg, 23 rue Loess,BP 43, F-67034 Strasbourg 2, France
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 964卷
关键词：
Thin films; Sulphide materials; CHALCOGENIDE PEROVSKITES;
D O I：
10.1016/j.jallcom.2023.171272
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We attempt to grow perovskite CaTiS3 by pulsed laser deposition (PLD) on various substrates using a CaS:TiS2 target. Using Al2O3 (0001) substrates at 600 degrees C deposition temperature in vacuum, Ca1.0Ti1.05S2.48Oy stoichiometry is measured by Energy-dispersive X-ray spectroscopy (EDS) and Ca1.0Ti1.0S2.0O0.7 by Rutherford Backscattering Spectrometry (RBS). This indicates that when the films are grown in vacuum at moderate temperature, a high amount of S can be transferred from the target to the film. While no phase segregation of CaS and TiS2 could be observed, no perovskite CaTiS3 phase could be obtained, but rather a phase governed by van der Waals interactions. The films show a highly doped n-type semiconductor behavior with absorption coefficient in the 105 cm-1 range at 350-2500 nm but no surface photovoltage signal. This work should stimulate further experimental efforts in PLD growth of chalcogenides and chalcogenide perovskites.
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页数：5
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