Pillar strategy enhanced ion transport and structural stability toward ultra-stable KVPO4F cathode for practical potassium-ion batteries

被引:19
|
作者
Zhao, Jing [1 ]
Qin, Yanyang [1 ]
Li, Long [1 ]
Wu, Hu [1 ]
Jia, Xin [1 ]
Zhu, Xiaolong [1 ]
Zhao, Hongyang [1 ]
Su, Yaqiong [1 ]
Ding, Shujiang [1 ]
机构
[1] Xi An Jiao Tong Univ, Univ Engn Res Ctr Shaanxi Prov, Engn Res Ctr Energy Storage Mat & Devices, Sch Chem,Minist Educ, Xian 710049, Peoples R China
基金
中国国家自然科学基金;
关键词
Ion transport; Structural stability; KVPO4F; Cs-substitution; Stable potassium-ion batteries; ELECTROCHEMICAL PERFORMANCE; SODIUM; OXIDE;
D O I
10.1016/j.scib.2023.02.029
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
KVPO4F (KVPF) is a promising cathode material for potassium-ion batteries (PIBs) because of its high operating voltage, high energy density, and excellent thermal stability. Nevertheless, the low kinetics and large volume change have been the major hurdles causing irreversible structural damage, high inner resistance, and poor cycle stability. Herein, a pillar strategy of Cs+ doping in KVPO4F is introduced to reduce the energy barrier for ion diffusion and volume change during potassiation/depotassiation, which significantly enhances the K+ diffusion coefficient and stabilizes the crystal structure of the material. Consequently, the K0.95Cs0.05VPO4F (Cs-5-KVPF) cathode exhibits an excellent discharge capacity of 104.5 mAh g-1 at 20 mA g-1 and a capacity retention rate of 87.9% after 800 cycles at 500 mA g-1. Importantly, Cs-5-KVPF//graphite full cells attain an energy density of 220 Wh kg -1 (based on the cath-ode and anode weight) with a high operating voltage of 3.93 V and 79.1% capacity retention after 2000 cycles at 300 mA g-1. The Cs-doped KVPO4F cathode successfully innovates the ultra-durable and high-performance cathode materials for PIBs, demonstrating its considerable potential for practical applications.(c) 2023 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
引用
收藏
页码:593 / 602
页数:10
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