Novel Method for Deposition of Gas-Tight SiC Coatings

被引:3
|
作者
Shikunov, Sergey [1 ]
Kaledin, Alexei [1 ]
Shikunova, Irina [1 ]
Straumal, Boris [1 ]
Kurlov, Vladimir [1 ]
机构
[1] Russian Acad Sci, Osipyan Inst Solid State Phys, Ac Osipyan St 2, Chernogolovka 142432, Russia
关键词
silicon carbide; coatings; deposition; high-entropy alloys; gas permeability; thermal oxidation; thermal shock stability; CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; PROTECTIVE-COATINGS; OXIDATION; FILMS; CERAMICS; GROWTH; CVD;
D O I
10.3390/coatings13020354
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new high-temperature method for the deposition of gas-tight silicon carbide protective coatings with low gas permeability has been developed. The free carbon atoms form during the high-temperature pyrolysis of hydrocarbon molecules. In turn, carbon reacts with molten silicon contained in the subsurface substrate layers and/or with silicon vapor. The source of silicon vapor serves the molten silicon in the heated zone of a reactor furnace. Such coatings effectively protect SiC-C-Si and SiC-C-MoSi2 ceramics, carbon-carbon composite materials, structural graphite, and refractory metals and alloys from oxidation. The conducted tests show the high thermal oxidation and thermal shock stability of deposited protective coatings, as well as their good adhesion to the substrates.
引用
收藏
页数:15
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