Features of the Structure and the Optical and Electrical Properties of SiO2:Cu ° Thin Films Deposited by Pulsed-Laser Evaporation

SiO2- and Cu degrees-based thin films are deposited onto silicon and quartz substrates by the pulsed-laser evaporation of a SiO2:Cu degrees composite target synthesized by the sol.gel technique. The features of the structure and the electrical and optical properties of the films at different compositions of the SiO2:Cu degrees target are determined. The frequency dependence of the permittivity e of the SiO2:Cu degrees films shows a decrease in the range of 10 kHz-1 MHz. It is assumed on the basis of analysis of the absorption spectra of the films in the optical range that, at a high Cu degrees concentration, encapsulated copper nanoparticles form in the film, which is confirmed by an increase in the optical band gap from 2.5 to 3.3 eV and the enhancement of absorption in the range of 590-650 nm. The synthesized films can be used as solar-cell coatings to increase solar-energy absorption.