Characterization of local non-equilibrium phonons in bulk MoS2 probed by temperature-dependent Raman scattering

被引:0
|
作者
Liu, Ruian [1 ]
Miyata, Masanobu [1 ]
Koyano, Mikio [1 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, 1-1 Ishikawa, Nomi 9231292, Japan
关键词
Raman spectroscopy; thermal non-equilibrium; optical phonons; TMD materials; THERMAL-CONDUCTIVITY; SINGLE; TRANSISTORS; EXPANSION; DIAMOND;
D O I
10.35848/1347-4065/acd497
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study presents an experimental implementation to determine the temperature dependence of Raman spectra of bulk 2H-MoS2 in the temperature range of 300-650 K. In addition, we have measured TAS/ S according to the anti-Stokes to Stokes integrated intensity ratio (I-AS/I-S). The results indicate that Raman shift of both the vibration modes E(2)g(1) and A(1g) exhibits a linear temperature-dependent behavior in the heating and cooling processes. It is confirmed that the sample did not deteriorate by oxidization and decomposition at high temperatures. However, above 500 K, the measured phonon temperature T-AS/ (S) deviated from the heat bath temperature. It is suggested that the IAS/ IS does not correspond to the equilibrium population of optical phonons, thus indicating that the measurement was not in thermal equilibrium but in a thermal steady state under laser irradiation. We conclude that this is caused by the difference in relaxation times in the thermal steady state. (c) 2023 The Japan Society of Applied Physics
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页数:5
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