0.6-V CMOS bulk-driven instrumentation amplifier for IoMT bioimpedance analysis

被引:0
|
作者
Carrillo, Juan M. [1 ,4 ]
Ocampo-Hidalgo, Juan J. [2 ]
Corbacho, Israel [1 ]
de la Cruz-blas, Carlos A. [3 ]
Dominguez, Miguel a. [1 ]
机构
[1] Univ Extremadura, Sch Ind Engn, Dept Elect Elect & Automat Engn, Badajoz, Spain
[2] Univ Autonoma Metropolitana Azcapotzalco, Dept Elect, Mexico City, Mexico
[3] Univ Publ Navarra, Inst Smart Cities, IEEC Dept, Pamplona, Spain
[4] Univ Extremadura, Sch Ind Engn, Dept Elect Elect & Automat Engn, Badajoz 06006, Spain
关键词
bioimpedance; bulk-driven; flipped voltage follower; indirect current feedback; instrumentation amplifier; CONTINUOUS-TIME FILTER; DESIGN; LOOP; OTA;
D O I
10.1002/cta.4008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An instrumentation amplifier (IA), aimed at wideband bioimpedance analysis in the low-voltage low-power scenario of internet of medical things (IoMT), is presented. The operation principle is based on the indirect current feedback technique, where an input and a feedback transconductor determine the voltage gain of the preamplifier. The required transconductors consist of two bulk-driven flipped-voltage-follower cells and an active pseudo-resistor, thus leading to a linear and compact implementation. The circuit has been designed and fabricated in 180 nm CMOS technology to operate with a 0.6-V supply. Experimental results obtained from measurements on eight samples of the silicon prototype show that when the IA is programmed to have a nominal voltage gain of 11 V/V, the bandwidth is 316.2 kHz, the CMRR exceeds 63 dB, and the maximum output voltage that can be processed with a THD below -40 dB is 555 mV pp$$ {}_{pp} $$. An instrumentation amplifier aimed at wideband bioimpedance analysis in the low-voltage low-power scenario of internet of medical things and supplied with 0.6 V is presented. Experimental results in 180 nm CMOS technology are provided. image
引用
收藏
页码:4970 / 4984
页数:15
相关论文
共 50 条
  • [41] Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS processes
    Urban, Christopher
    Moon, James E.
    Mukund, P. R.
    MICROELECTRONICS RELIABILITY, 2011, 51 (04) : 727 - 732
  • [42] Bulk-driven adaptively biased OTA in 0.18 μm CMOS
    Kulej, T.
    Khateb, F.
    ELECTRONICS LETTERS, 2015, 51 (06) : 458 - 459
  • [43] Low Voltage Bulk-Driven CMOS Inverter with Lower Delays
    Gupta, Maneesha
    Aggarwal, Bhawna
    Garg, Priyanka
    Aggarwal, Parish
    Jain, Swati
    2015 ANNUAL IEEE INDIA CONFERENCE (INDICON), 2015,
  • [44] A bulk-driven CMOS OTA with 68 dB DC gain
    Rosenfeld, J
    Kozak, MC
    Friedman, EG
    ICECS 2004: 11th IEEE International Conference on Electronics, Circuits and Systems, 2004, : 5 - 8
  • [45] A 0.6-V voltage reference circuit based on Σ-VTH architecture in CMOS/SIMOX
    Ugajin, M
    Tsukahara, T
    2001 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2001, : 141 - 142
  • [46] Design of Low Noise, Low Power, Bulk-Driven CMOS Based Operational Transconductance Amplifier for Biosensor Applications
    G. Gifta
    Gracia Nirmala Rani
    S. Rajaram
    Journal of Electrical Engineering & Technology, 2021, 16 : 2793 - 2807
  • [47] 0.3V Bulk-Driven Current Conveyor
    Khateb, Fabian
    Kulej, Tomasz
    Kumngern, Montree
    IEEE ACCESS, 2019, 7 : 65122 - 65128
  • [48] Design of Low Noise, Low Power, Bulk-Driven CMOS Based Operational Transconductance Amplifier for Biosensor Applications
    Gifta, G.
    Rani, Gracia Nirmala
    Rajaram, S.
    JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, 2021, 16 (05) : 2793 - 2807
  • [49] A 0.6-V Tail-Less Inverter Stacking Amplifier with 0.96 PEF
    Shen, Linxiao
    Mukherjee, Abhishek
    Li, Shaolan
    Tang, Xiyuan
    Lu, Nanshu
    Sun, Nan
    2019 SYMPOSIUM ON VLSI CIRCUITS, 2019, : C144 - C145
  • [50] A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5-62.5-GHz Low Noise Amplifier in 28-nm Bulk CMOS
    Liang, Chia-Jen
    Chiang, Ching-Wen
    Zhou, Jia
    Tien, Chao-Jen
    Huang, Rulin
    Wen, Kuei-Ann
    Chang, Mau-Chung Frank
    Kuan, Yen-Cheng
    2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2021, : 768 - 771