Write-enhanced and radiation-hardened SRAM for multi-node upset tolerance in space-radiation environments

As transistor feature size is scaling down, the probability of charge sharing in a space-radiation environment increases because of the reduced distance between adjacent transistors. The single-event multiple-node upset (SEMNU) caused by charge sharing is a major source of data errors in high-density static random-access memory (SRAM). In this paper, a radiation-hardened SRAM using polarity hardening is proposed. Compared to other cells (RHPD-12T, RSP14T, SEA14T, We-Quatro, QUCCE12T, SARP12T, SIS10T, and 12T), the proposed RHC-14T cell saves 8.47%, 91.34%, 162.71%, -20.63%, -20.50%, 113.18%, 63.27%, and 20.60% of the read-delay time and 7.96%, 66.17%, 68.16%, 57.71%, 22.39%, 12.44%, 1,010.45%, and 13.43% of the write-delay time, respectively. Moreover, this excellent performance entails only minimal power consumption. The proposed cell can work well in the radiation-intensive space environment.