Effect of passivation on selectively grown sub-μm Ge-on-Si single photon avalanche diode detectors

被引：2

作者：

Coughlan, C. ^{[1
]}

Mirza, M. M. ^{[1
]}

Kirdoda, J. ^{[1
]}

Dumas, D. ^{[1
]}

Smith, C. ^{[1
]}

McCarthy, C. ^{[1
]}

Millar, R. W. ^{[1
]}

Paul, D. J. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Scotland

来源：

2023 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2023年

基金：

英国工程与自然科学研究理事会; “创新英国”项目;

关键词：

germanium-on-silicon; single photon avalanche diode detector; passivation; selectively grown;

D O I：

10.1109/SIPHOTONICS55903.2023.10141911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge-on-SOI (silicon-on-insulator) single photon avalanche diodes (SPADs) have been fabricated with exposed sidewalls allowing variation of passivation techniques. Reduced dark currents and density of surface states are demonstrated with thermal oxide passivation, demonstrating the benefit of optimal passivation of low aspect ratio selectively grown Ge.

引用

页数：2

共 21 条

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Kirdoda, Jaroslaw
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[2] Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors
Kirdoda, Jaroslaw
Dumas, Derek C. S.
Kuzmenko, Kateryna
Vines, Peter
Greener, Zoe M.
Millar, Ross W.
Mirza, Muhammad M.
Buller, Gerald S.
Paul, Douglas J.
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019), 2019,
[3] High sensitivity Ge-on-Si single-photon avalanche diode detectors
Llin, Lourdes Ferre
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Kuzmenko, Kateryna
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Paul, Douglas J.
OPTICS LETTERS, 2020, 45 (23) : 6406 - 6409
[4] Ge-on-Si Single Photon Avalanche Diode Detectors for LIDAR in the ShortWave Infrared
Millar, Ross W.
Kirdoda, Jaroslaw
Kuzmenko, Kateryna
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Kirdoda, J.
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2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2019,
[6] Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths
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JOURNAL OF PHYSICS-PHOTONICS, 2022, 4 (01):
[7] 3D LIDAR imaging using Ge-on-Si single-photon avalanche diode detectors
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[8] A Ge-on-Si Single Photon Avalanche Diode Operating in Geiger Mode at Infrared Wavelengths
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[9] Ge-on-Si single-photon avalanche diode using a double mesa structure
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[10] High Temperature Tolerant Ge-on-Si Single Photon Avalanche Diode at the Communication Wavelength
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