Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

被引:5
|
作者
Schock, Robin T. K. [1 ]
Neuwald, Jonathan [1 ]
Moeckel, Wolfgang [1 ]
Kronseder, Matthias [1 ]
Pirker, Luka [2 ,3 ]
Remskar, Maja [2 ]
Huettel, Andreas K. K. [1 ]
机构
[1] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany
[2] Jozef Stefan Inst, Solid State Phys Dept, Ljubljana 1000, Slovenia
[3] Czech Acad Sci, J Heyrovsky Inst Phys Chem Vvi, Prague 18223, Czech Republic
关键词
bismuth; nanotubes; molybdenum disulfide; quantum confinement; quantum dots; COULOMB-BLOCKADE; ELECTRONIC-PROPERTIES; CARRIER MOBILITY; EFFECTIVE-MASS; MONOLAYER; TRANSITION; OSCILLATIONS; TRANSISTORS; TRANSPORT; BAND;
D O I
10.1002/adma.202209333
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100 k omega are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100 mK.
引用
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页数:7
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