Low-temperature synthesis of MoS2 at 200 °C

Two-dimensional (2D) materials such as graphene and MoX2 (X = S, Se, W, Te) are very important for the next-generation electronic devices. One of the most exciting materials in 2D materials is MoS2 and the most important property that MoS2 has, but graphene does not have, is the bandgap. For obtaining good quality of MoS2 film, the selection of Mo precursor and S source is very important. And the other experimental conditions, such as synthesis temperature and reaction gas flow rate, are also important for obtaining good quality of MoS2 thin film, particularly at low temperature. Synthesis of MoS2 at the high temperature above 500 °C is relatively easy for the researchers. However, the synthesis of MoS2 at the low temperature is not easy. In this work, we will report on the experimental results of MoS2 synthesis carried out on SiO2(300 nm)/Si substrate at low temperature of 200 °C and 300 °C with precursor of Mo(CO)6. Even at the very low temperature of 200 °C, we could synthesize relatively good quality of MoS2 films.