Optical Actuation Performance of Phase-Change RF Switches

被引:1
|
作者
Charlet, I. [1 ]
Guerber, S. [1 ]
Naoui, A. [2 ,3 ]
Charbonnier, B. [1 ]
Dupre, C. [1 ]
Lugo-Alvarez, J. [1 ]
Hellion, C. [1 ]
Allain, M. [1 ]
Podevin, F. [4 ]
Perret, E. [5 ]
Reig, B. [1 ]
机构
[1] Univ Grenoble Alpes, CEA Leti, F-38000 Grenoble, France
[2] Univ Grenoble Alpes, TIMA Lab, Grenoble INP, CEA Leti, F-38000 Grenoble, France
[3] Univ Grenoble Alpes, LCIS Lab, Grenoble INP, F-38000 Grenoble, France
[4] Univ Grenoble Alpes UGA, TIMA Lab, Grenoble INP, F-38031 Grenoble, France
[5] Univ Grenoble Alpes, LCIS Lab, Grenoble INP, F-26000 Valence, France
关键词
Optical switches; Optical pulses; Phase change materials; Optical fibers; Radio frequency; Optical device fabrication; Optical devices; Germanium telluride; optical actuation; phase change material (PCM); radio frequency; RF switch;
D O I
10.1109/LED.2023.3347800
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical actuation of GeTe-based radio frequency switches is studied for the first time at 915-nm optical wavelength. By inducing self -heating of the phase change material through light absorption, this approach removes the need for integrated micro -heaters. First, laser pulse conditions required to set the RF switches in ON -and OFF -states are found with optical pulse peak powers up to few hundred mW. Amorphization is obtained for optical pulses of 100 to 500 ns, and crystallization for pulses of 2 to 6 mu s. A resistivity ratio of 2E4 is measured between both states. Cycling endurance is performed on a 4 x 5 mu m(2) switch, overpassing 1500 cycles, which is much higher compared to previously reported optical demonstrations. Small -signal measurements show 10% lower OFF -state capacitances using optical actuation compared to electrical actuation through micro -heaters. 37 dBm power handling capability is reported in the switch OFF -state at 915 MHz. This optical actuation demonstration corresponds to a standard wavelength in integrated photonic circuits and thus, this work constitutes a first step towards a CMOS compatible fully -integrated optical actuation solution for RF switches based on phase -change material.
引用
收藏
页码:500 / 503
页数:4
相关论文
共 50 条
  • [31] Erasable phase-change optical materials
    Yamada, N
    MRS BULLETIN, 1996, 21 (09) : 48 - 50
  • [32] OPTICAL MEMORY Phase-change memory
    Kuramochi, Eiichi
    Notomi, Masaya
    NATURE PHOTONICS, 2015, 9 (11) : 712 - 714
  • [33] Erasable phase-change optical materials
    MRS Bull, 9 (48-50):
  • [34] RF Power-Handling Performance for Direct Actuation of Germanium Telluride Switches
    Leon, Alexandre
    Reig, Bruno
    Perret, Etienne
    Podevin, Florence
    Saint-Patrice, Damien
    Puyal, Vincent
    Lugo-Alvarez, Jose
    Ferrari, Philippe
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (01) : 60 - 73
  • [35] Development of micromachined RF switches with piezofilm actuation
    Fox, CHJ
    Chen, XS
    Jiang, HW
    Kirby, PB
    McWilliam, S
    SMART STRUCTURES AND MATERIALS 2002: SMART ELECTRONICS, MEMS, AND NANOTECHNOLOGY, 2002, 4700 : 40 - 49
  • [36] Investigation Into Self Actuation Limitation and Current Carrying Capacity of Chalcogenide Phase Change GeTe-Based RF Switches
    Singh, Tejinder
    Mansour, Raafat R.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5717 - 5722
  • [37] A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation
    El-Hinnawy, Nabil
    Borodulin, Pavel
    Wagner, Brian
    King, Matthew R.
    Mason, John S., Jr.
    Jones, Evan B.
    McLaughlin, Sean
    Veliadis, Victor
    Snook, Megan
    Sherwin, Marc E.
    Howell, Robert S.
    Young, Robert M.
    Lee, Michael J.
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (10) : 1313 - 1315
  • [38] Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories
    Yin, You
    Hosaka, Sumio
    SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 2012, 497 : 106 - 110
  • [39] Wideband SPDT and SP4T RF Switches using Phase-Change Material in a SiGe BiCMOS Process
    Amin, Farooq
    Beglin, Thomas
    Edwards, Nicholas
    El-Hinnawy, Nabil
    Slovin, Greg
    Howard, David
    Nichols, Doyle
    Young, Robert M.
    2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2021, : 431 - 434
  • [40] Overcoming optical performance and diffusion issues in thermally tunable phase-change metasurfaces
    Shields, Joe
    de Galarreta, Carlota Ruiz
    Bertolotti, Jacopo
    Wright, C. David
    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2021,