Dopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperatures

被引:4
|
作者
Geng, Jianpei [1 ]
Shalomayeva, Tetyana [1 ]
Gryzlova, Mariia [1 ]
Mukherjee, Amlan [1 ]
Santonocito, Santo [1 ]
Dzhavadzade, Dzhavid [1 ]
Dasari, Durga Bhaktavatsala Rao [1 ]
Kato, Hiromitsu [2 ]
Stoehr, Rainer [1 ]
Denisenko, Andrej [1 ]
Mizuochi, Norikazu [3 ,4 ,5 ]
Wrachtrup, Jorg [1 ]
机构
[1] Univ Stuttgart, Inst Phys 3, ZAQuant, D-70569 Stuttgart, Germany
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[3] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan
[4] Kyoto Univ, Ctr Spintron Res Network, Uji, Kyoto 6110011, Japan
[5] KEK, Int Ctr Quantum Field Measurement Syst Studies Un, Tsukuba, Ibaraki 3050801, Japan
基金
日本学术振兴会; 欧盟地平线“2020”;
关键词
ELECTRON SPINS; QUANTUM; ENTANGLEMENT; TIME;
D O I
10.1038/s41534-023-00777-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologies. Here we investigate the stabilization of negatively charged nitrogen-vacancy (NV-) centers in phosphorus-doped diamond at liquid helium temperatures. Photoionization of phosphorous donors in conjunction with charge diffusion at the nanoscale enhances NV0 to NV- conversion and stabilizes the NV- charge state without the need for an additional repump laser. The phosphorus-assisted stabilization is explored and confirmed both with experiments and our theoretical model. Stable photoluminescence-excitation spectra are obtained for NV- centers created during the growth. The fluorescence is continuously recorded under resonant excitation to real-time monitor the charge state and the ionization and recombination rates are extracted from time traces. We find a linear laser power dependence of the recombination rate as opposed to the conventional quadratic dependence, which is attributed to the photo-ionization of phosphorus atoms.
引用
收藏
页数:8
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