Electronic properties of half-Heusler compounds XCrSb (X = Fe, Ru, Os): Potential applications as spintronics and high-performance thermoelectric materials

被引:16
|
作者
Nenuwe, N. O. [1 ]
Omugbe, E. [1 ]
机构
[1] Fed Univ Petr Resources, Dept Phys, Effurun 1221, Delta State, Nigeria
关键词
Thermoelectric properties; Figure of merit; Semiconductors; Half-heuslers; XCrSb (X; Fe; Ru; Os); FULL-HEUSLER; METALLICITY;
D O I
10.1016/j.cap.2023.02.013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles computations were used to investigate the magnetic, structural, thermoelectric, and electronic properties of the XCrSb (X = Fe, Ru, Os) half-Heuslers. The formation energies and structural phases of all three compounds were determined. The description of the magnetic moments, spin-polarized electronic band -structures, and density of states revealed the half-metallic behaviour of the Type-1 half-Heuslers. Furthermore, thermoelectric (TE) parameters such as the dimensionless figure-of-merit (zT), Seebeck coefficient (S), electrical conductivity (sigma/tau), power factor (PF), and thermal conductivity (kappa/tau) were investigated using Boltzmann transport theory. Our findings suggest that Type-1 FeCrSb and RuCrSb favour thermoelectric applications at ambient and high temperatures, whereas OsCrSb is a poor TE material because of its low zT.
引用
收藏
页码:70 / 77
页数:8
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