Characterization and simulation of radiation effects on active edges n-on-p technology planar pixel sensors

被引：0

作者：

Djamai, Djemouai ^{[1
]}

Aouadj, Khaoula ^{[2
]}

Oussalah, Slimane ^{[3
]}

Lounis, Abdenour ^{[4
]}

Gkougkousis, Evangelos-Leonidas ^{[5
]}

机构：

[1] Abbes Laghrour Khenchela Univ, Lab Engn & Sci Adv Mat ISMA, Khenchela, Algeria

[2] Batna 1 Univ, Lab Phys & Chem Study Mat LEPCM, Batna, Algeria

[3] Ctr Dev Technol Avancees CDTA, Algiers, Algeria

[4] Univ Paris Saclay, Lab Phys Infinis Irene Joliot Curie IJCLab 2, Gif Sur Yvette, France

[5] Univ Zurich, Phys Inst, Zurich, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2024年 / 1062卷

关键词：

HL-LHC; Active edge; Radiation damage;

D O I：

10.1016/j.nima.2024.169152

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The ATLAS inner tracker has to be upgraded to meet the requirements for radiation hardness and geometrical acceptance in order to withstand the harsh conditions of High Luminosity LHC (HL-LHC). This requires segmented silicon sensors of increased geometrical efficiency. The active edge technology allows to reduce the inactive area at the border of the sensor. The main objective of this work is to evaluate by TCAD simulation, conducted using SilvacoTM TCAD software, the performance of planar n-on-p technology sensors with active edges exposed to high level of radiation for fluences up to 1 x 1016 neq/cm2, using a three-level trap model for ptype FZ silicon material. By using the secondary ion mass spectrometry (SIMS) technique, an accurate representation of the sensor structure was obtained in terms of doping concentration profile. Charge collection efficiency (CCE) is studied as a function of radiation fluence.

引用

页数：3

共 50 条

[21] Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
马林东
李豫东
郭旗
文林
周东
冯婕
刘元
曾骏哲
张翔
王田珲
[J]. Chinese Physics B, 2017, (11) : 268 - 272
[22] Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
Ma, Lindong
Li, Yudong
Guo, Qi
Wen, Lin
Zhou, Dong
Feng, Jie
Liu, Yuan
Zeng, Junzhe
Zhang, Xiang
Wang, Tianhui
[J]. CHINESE PHYSICS B, 2017, 26 (11)
[23] Characterisation of "n-in-p" pixel sensors for high radiation environments
Tsurin, I.
Affolder, A.
Allport, P. P.
Casse, G.
Chmill, V.
Huse, T.
Wormald, M.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 650 (01): : 140 - 144
[24] Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment
Kimura, K.
Yamaguchi, D.
Motohashi, K.
Nakamura, K.
Unno, Y.
Jinnouchi, O.
Altenheiner, S.
Blue, A.
Bomben, M.
Butter, A.
Cervelli, A.
Crawley, S.
Ducourthial, A.
Gisen, A.
Hagihara, M.
Hanagaki, K.
Hara, K.
Hirose, M.
Homma, Y.
Ikegami, Y.
Kamada, S.
Kono, T.
Macchiolo, A.
Marchiori, G.
Meloni, F.
Milovanovic, M.
Morton, A.
Mullier, G.
Munoz, F. J.
Nellist, C.
Paschen, B.
Quadt, A.
Rashid, T.
Rieger, J.
Rummler, A.
Sato, K.
Sato, K.
Savic, N.
Sawai, H.
Sexton, K.
Stramaglia, M. E.
Swiatlowski, M.
Takashima, R.
Takubo, Y.
Terzo, S.
Todome, K.
Tojo, J.
Van Houten, K.
Weingarten, J.
Wonsak, S.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 831 : 140 - 146
[25] Performance of thin planar n-on-p silicon pixels after HL-LHC radiation fluences
Ducourthial, A.
Bomben, M.
Calderini, G.
Camacho, R.
D'Eramo, L.
Luise, I
Marchiori, G.
Boscardin, M.
Bosisio, L.
Darbo, G.
Dalla Betta, G-F
Giacomini, G.
Meschini, M.
Messineo, A.
Ronchin, S.
Zorzi, N.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 927 : 219 - 229
[26] Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments
Unno, Y.
Ikegami, Y.
Terada, S.
Mitsui, S.
Jinnouchi, O.
Kamada, S.
Yamamura, K.
Ishida, A.
Ishihara, M.
Inuzuka, T.
Hanagaki, K.
Hara, K.
Kondo, T.
Kimura, N.
Nakano, I.
Nagai, K.
Takashima, R.
Tojo, J.
Yorita, K.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 650 (01): : 129 - 135
[27] Functional characterization of planar sensors with active edges using laser and X-ray beam scans
Povoli, M.
Bagolini, A.
Boscardin, M.
Dalla Betta, G. -F.
Giacomini, G.
Hasi, J.
Oh, A.
Zorzi, N.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 718 : 350 - 352
[28] Development of novel n+-in-p Silicon Planar Pixel Sensors for HL-LHC
Unno, Y.
Gallrapp, C.
Hori, R.
Idarraga, J.
Mitsui, S.
Nagai, R.
Kishida, T.
Ishida, A.
Ishihara, M.
Kamada, S.
Inuzuka, T.
Yamamura, K.
Hara, K.
Ikegami, Y.
Jinnouchi, O.
Lounis, A.
Takahashi, Y.
Takubo, Y.
Terada, S.
Hanagaki, K.
Kimura, N.
Nagai, K.
Nakano, I.
Takashima, R.
Tojo, J.
Yorita, K.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 699 : 72 - 77
[29] TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology
Bui, Tuan A.
Reeves, Geoffrey K.
Leech, Patrick W.
Holland, Anthony S.
Taylor, Geoffrey
[J]. MRS ADVANCES, 2018, 3 (51): : 3053 - 3059
[30] TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology
Tuan A. Bui
Geoffrey K. Reeves
Patrick W. Leech
Anthony W. Holland
Geoffrey Taylor
[J]. MRS Advances, 2018, 3 (51) : 3053 - 3059

← 1 2 3 4 5 →