Thermoluminescent characteristics of UV-irradiated Aluminum nitride (AlN)

This paper presents results of studying the thermoluminescence (TL) properties of aluminum nitride (AlN) synthesized by chemical vapor deposition (CVD) method. Previously to study the TL properties, the phosphor was characterized by means of X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FT-IR), photoluminescence (PL), and electron microscopy (EDS-SEM). TL studies were performed after ultraviolet (UV) irradiation using the whole spectrum of the xenon (Xe) lamp. XRD results show that AlN has a hexagonal crystalline structure. EDS-SEM analysis revealed the presence of oxygen (O) and Carbon (C) impurities in the powders. FT-IR spectroscopy lets us discuss the distribution of these impurities in the crystalline structure. The sample with 9.54% of C and 7.36% of O exhibits a TL glow curve with a predominant peak around 450 K, and according to the deconvolution method was found that the glow curve is composed by six peaks each one centered at 383, 446, 478, 540, 587 and 637 K. The TL response as a function of dose fits a logarithmic increasing function along the dose range studied: These results suggest that AlN is a promising material for application as a TL dosimeter for UV radiation.