An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT

被引：0
|
作者：
Cheng, Lin [1 ,2 ]
Lu, Hongliang [1 ,2 ]
Yan, Silu [1 ,2 ]
Qi, Junjun [1 ,2 ]
Cheng, Wei [3 ]
Zhang, Yuming [1 ,2 ]
Zhang, Yimen [1 ,2 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
[2] Xidian Univ, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
[3] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modul, Nanjing 210016, Peoples R China
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2023年 / 23卷 / 04期
关键词：
Heterojunction bipolar transistor; aging small-signal equivalent circuit model; key model parameters; aging sensitivity; RELIABILITY;
D O I：
10.1109/TDMR.2023.3323899
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To predict the aging effect on indium phosphide (InP) heterojunction bipolar transistors (HBTs), an aging small-signal equivalent circuit modeling method is proposed in this paper, with special attention to the degradation of the key small-signal model parameters of the InP HBTs in aging experiments. Based on the analysis of the aging sensitivity of the complete small-signal equivalent circuit parameters, semi-empirical approach is used to model the degradation of the key parameters in bipolar transistors as a function of stress magnitude and stress time. Its validity and accuracy are demonstrated by comparison of the modeled and measured results for InP HBTs before and after degradation.
引用
收藏
页码：530 / 536
页数：7
相关论文
共 50 条
  • [21] SMALL-SIGNAL EQUIVALENT CIRCUIT FOR IMPATT TRANSISTORS
    NGUYENQUANG, A
    [J]. ELECTRONICS LETTERS, 1975, 11 (21) : 503 - 504
  • [22] BJT Small-Signal Equivalent Circuit Representation
    McAndrew, Colin C.
    Nagel, Laurence W.
    [J]. 2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 153 - 156
  • [23] Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
    Gao, J
    Li, X
    Wang, H
    Boeck, G
    [J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2005, 152 (06): : 661 - 666
  • [24] Fast and accurate method for small-signal FET equivalent circuit identification
    Masar, M.
    Tomaska, M.
    Klasovity, M.
    [J]. PROCEEDINGS OF THE INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2006, : 475 - +
  • [25] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT
    DAMBRINE, G
    CAPPY, A
    HELIODORE, F
    PLAYEZ, E
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) : 1151 - 1159
  • [26] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT
    DAMBRINE, G
    CAPPY, A
    [J]. ANNALS OF TELECOMMUNICATIONS, 1988, 43 (5-6) : 274 - 281
  • [27] Uncertainty estimation in SiGe HBT small-signal modeling
    Masood, Syed A.
    Johansen, Tom K.
    Vidkjaer, Jens
    Krozer, Viktor
    [J]. GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS, 2005, : 393 - 396
  • [28] SiGe HBT's small-signal Pi modeling
    Yang, Tian-Ren
    Tsai, Julius Ming-Lin
    Ho, Chih-Long
    Hu, Robert
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (07) : 1417 - 1424
  • [29] Physical scaling rules for AlGaAs/GaAs power HBT's based on a small-signal equivalent circuit
    Schaper, U
    Zwicknagl, P
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (07) : 1006 - 1009
  • [30] Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit
    Wu, Jianyu
    Xu, Mengdi
    Zheng, Yifei
    Zhang, Hongli
    Xu, Hao
    [J]. IEICE ELECTRONICS EXPRESS, 2024,
12345