Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

被引:14
|
作者
Li, Huiping [1 ]
Li, Dujuan [1 ]
Chen, Huiyi [1 ]
Yue, Xiaojie [2 ]
Fan, Kai [3 ]
Dong, Linxi [1 ]
Wang, Gaofeng [1 ]
机构
[1] Hangzhou Dianzi Univ, Engn Res Ctr Smart Microsensors & Microsyst, Sch Elect Informat, Minist Educ, Hangzhou 310018, Peoples R China
[2] Zhejiang Univ, Childrens Hosp, Sch Med, Hangzhou 310052, Peoples R China
[3] Hangzhou Dianzi Univ, Sch Automat, Hangzhou 310018, Peoples R China
关键词
silicon nanowires (SiNWs); field effect transistors (FETs); biosensor; biomedical detection; surface modification; LABEL-FREE DETECTION; ULTRASENSITIVE ELECTRICAL DETECTION; REAL-TIME; HUMAN SERUM; AVIAN INFLUENZA; MULTIPLEXED DETECTION; BIOMARKER DETECTION; DNA HYBRIDIZATION; VIRUS; PROTEIN;
D O I
10.3390/s23156808
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs.
引用
收藏
页数:21
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