Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers

被引：2
|
作者：
Ciabattini, F. [1 ]
Arabhavi, A. M. [1 ]
Hamzeloui, S. [1 ]
Ebrahimi, M. [1 ]
Ostinelli, O. [1 ]
Bolognesi, C. R. [1 ]
机构：
[1] Swiss Fed Inst Technol, Millimeter Wave Elect MWE Grp, Gloriastr 35, CH-8092 Zurich, Switzerland
来源：
2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年
关键词：
InP/GaAsSb; Double Heterojunction Bipolar Transistors (DHBTs); Thermal Resistance; Junction Temperature;
D O I：
10.1109/BCICTS54660.2023.10310928
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modern telecommunication systems require transistors that can deliver high power levels at high frequencies. This poses challenges for the reliability of transistors operating close to their peak performance. The thermal behavior of mm-wave InP/GaAsSb DHBTs is studied for several emitter contact widths and lengths, and various epitaxial design alternatives are considered. The effect of the emitter and collector layer stacks is reported. Straightforward modifications to the GaInAs sub-collector contact thickness and composition significantly reduce the thermal resistance RTH and junction temperature. We show that a thin emitter yields similar thermal improvements in characteristics as improvements made to the collector design.
引用
收藏
页码：24 / 27
页数：4
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