Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

As a simple design method, the zoomed response surface (RS) method is useful for automatic design of low-voltage power MOSFETs. Low-voltage MOSFET characteristics have been improved continuously with respect to not only low power loss but also low cost in answer to the request for a high-performance system. Complicated requirements lead to a long development schedule and low yield. Model-based design and machine learning are prospective methods to address the problem. However, reported methods require high simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a demonstration of a zoomed RS method for automatic design of 100 V-class power MOSFETs. Five parameters were automatically designed for not only minimizing on-resistance but also minimizing total power loss, taking into account process margin and switching noise with a simulation number of only 130.