A novel CNTFET based Schmitt-Trigger read decoupled 12T SRAM cell with high speed, low power, and high Ion/Ioff ratio

Many researchers are working to develop a static random access memory (SRAM) cell that uses low power, has good stability, better I-on/I-off ratio and speed. This paper presents a single sided Schmitt-trigger driven read decoupled 12 transistors (STRD 12T) carbon nanotube field-effect transistor (CNTFET) SRAM cell with controlled power gating approach. The Schmitt-trigger (ST) inverter along with power gating and read decouple approach has low power, good read and write delay, better stability and I-on/I-off ratio. The stacking effect reduces the leakage power of the proposed cell. The proposed STRD 12T SRAM illustrates the maximum reduction in static power consumption, write delay, read delay, and maximum improvement in I-on/I-off ratio is 1544.34, 112.37, 1.40, and 8107.88 times respectively, than the considered SRAM cells. The simulation is performed with Cadence Virtuoso utilizing the 32 nm CNTFET model from Stanford University.