Two-dimensional Van der Waals heterostructures based chalcogenide for photovoltaic applications: a DFT study

被引:1
|
作者
Dahbi, Smahane [1 ]
Ghaithan, Hamid M. [2 ]
Alkadi, Muath [3 ]
Ahmed, Abdullah Ahmed Ali [4 ,5 ]
Qaid, Saif M. H. [2 ]
机构
[1] URL, Fac Sci, Lab Condensed Matter & Interdisciplinary Sci Label, Natl Ctr Sci & Tech Res,CNRST,LaMCScI, Rabat, Morocco
[2] King Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi Arabia
[3] King Abdulaziz City Sci & Technol, Riyadh, Saudi Arabia
[4] Univ Hamburg, Ctr Hybrid Nanostruct CHyN, D-20146 Hamburg, Germany
[5] Univ Hamburg, Fachbereich Phys, D-20146 Hamburg, Germany
关键词
2D compounds; Heterostructures; Type-II band alignment; Quantum efficiency; Solar cells; vdW stacking; MOSE2; TRANSITION; DISULFIDE;
D O I
10.1007/s11082-023-06114-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, structural, electronic properties, optical spectra, stability, as well as the quantum efficiency of bulk, monolayer and two different stacking heterostructure configurations (XY2/XY2) of dichalcogenide compounds XY2 (where X = Mo or W and Y = S or Se) were performed using density functional technique. Our findings reveal the strong chemical bonds and high interlayer banding energy for MoSe2/WSe2 heterostructure of configuration-2, which confirms its stability and its feasibility for synthesizing. Besides, the elastic stiffness coefficients demonstrate all studied heterostructures are mechanically stable at ambient pressure, this means that the studied heterostructures are harder to separate their components, making them more durable and less reactive under certain conditions, especially MoSe2/WSe2 heterostructure-configuration 2. Otherwise, the electronic band structure highlights an indirect semiconductor behavior for bulk XY2. In contrast, a strong ionic bonding between the chalcogen and metal atoms leads to the electrons confinement in the direction perpendicular to the plane revealing direct semiconductor behavior for monolayers XY2 at Gamma point. Besides, after combining two monolayers with different work functions the holes and electrons are accumulated in different layers, therefore indirect excitons have been observed for XY2/XY2 heterostructures (Gamma -> K). Furthermore, due to the presence of the type-II band alignment, the optical absorbance spectra proves that the absorbance is enhanced along both x and z directions for all investigated heterostructures. In addition, the MoSe2/WSe2 heterostructure of configuration-2, has about 65% of photons converted into usable electrical power, while 35% of photons are lost as heat and/or reflected. Finely, its high stability, its suitable forbidden band, its high visible light absorption, as well as its high quantum efficiency make the 2D Van der Waals MoSe2/WSe2 heterostructure-configuration-2 as new potential candidate for upcoming nano-electronic, photovoltaic and optoelectronic devices.
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页数:28
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