Influence of Sm3+ doped β-Ga2O3 thin films on structural, optical, and photoluminescence properties

被引：2

作者：

Kumar, M. Dilip ^{[1
]}

Akkera, Harish Sharma ^{[2
]}

Kambhala, Nagaiah ^{[3
]}

Kagola, Upendra Kumar ^{[4
]}

Ramesh, C. S. ^{[5
]}

Kumar, K. Vijaya ^{[6
]}

机构：

[1] Presidency Univ, Sch Engn, Dept Phys, Bangalore 560064, Karnataka, India

[2] BMS Inst Technol & Management, Dept Phys, Bangalore 560064, Karnataka, India

[3] Jain Deemed Be Univ, Sch Sci, Dept Phys, Bangalore 560011, Karnataka, India

[4] REVA Univ, Sch Appl Sci, Dept Phys, Bangalore 560064, Karnataka, India

[5] Presidency Univ, Dept Mech Engn, Bangalore 560064, Karnataka, India

[6] Dayananda Sagar Univ, Sch Engn, Dept Phys, Bangalore 562112, Karnataka, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2023年 / 34卷 / 31期

关键词：

BAND-GAP; PERFORMANCE; TRANSITION; MORPHOLOGY; GROWTH;

D O I：

10.1007/s10854-023-11505-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The pure and Sm-doped (1, 3, and 5 at%) beta-Ga2O3 thin films were deposited on a glass substrate using the sol-gel spin coating method and investigated the structural, morphological, and optical properties. The XRD studies revealed that all deposited thin films exhibited polycrystalline monoclinic beta-phase structure. The crystalline quality was greatly improved with the Sm-doping. The SEM-EDS, XPS, and Raman spectroscopy measurements confirmed the Sm element was successfully incorporated into the beta-Ga2O3 host lattice. The photoluminescence spectra showed a wide blue band region centered at 439 nm in all the films. The average optical transmittance was above 73% in the visible spectra for all deposited films. The optical band gap energy (E-g) decreased from 4.83 eV for pure beta-Ga2O3) film to 4.68 eV for 5 at% Sm-doped beta-Ga2O3 films.

引用

页数：9

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