Imaging the Terahertz Nanoscale Conductivity of Polycrystalline CsPbBr3 Perovskite Thin Films

被引:3
|
作者
Ogolla, Charles Otieno [1 ]
Loth, Yannik [2 ]
Haeger, Tobias
Kreusel, Cedric
Runkel, Manuel
Riedl, Thomas
Butz, Benjamin [3 ]
Wigger, Anna Katharina [2 ]
Schaeffer, Stephan [2 ]
Bolivar, Peter Haring [2 ]
机构
[1] Univ Siegen, Micro & Nanoanalyt Grp, D-57076 Siegen, Germany
[2] Univ Siegen, Inst High Frequency & Quantum Elect, D-57076 Siegen, Germany
[3] Univ Wuppertal, Inst Elect Devices, D-42119 Wuppertal, Germany
关键词
Near-field microscopy; Perovskites; Electrical conductivity; Grain boundaries; NEAR-FIELD MICROSCOPY; LIGHT-EMITTING-DIODES; GRAIN-BOUNDARIES; CARRIER MOBILITIES; ANALYTICAL-MODEL; SCATTERING;
D O I
10.1021/acs.nanolett.2c03214
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Terahertz (THz) radiation is a valuable tool to investigate the electronic properties of lead halide perovskites (LHPs). However, attaining high-resolution information remains elusive, as the diffraction-limited spatial resolution (similar to 300 mu m) of conventional THz methods prevents a direct analysis of microscopic effects. Here, we employ THz scattering scanning near-field optical microscopy (THz-sSNOM) for nanoscale imaging of cesium lead bromide (CsPbBr3) thin films down to the single grain level at 600 GHz. Adopting a scattering model, we are able to derive the local THz nanoscale conductivity in a contact-free fashion. Increased THz near-field signals at CsPbBr3 grain boundaries complemented by correlative transmission electron microscopy- energy-dispersive X-ray spectroscopy elemental analysis point to the formation of halide vacancies (VBr) and Pb-Pb bonds, which induce charge carrier trapping and can lead to nonradiative recombination. Our study establishes THz-sSNOM as a powerful THz nanoscale analysis platform for thin-film semiconductors such as LHPs.
引用
收藏
页码:2074 / 2080
页数:7
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