Near-infrared light emission from aluminum-doped tantalum-oxide thin films prepared using a simple co-sputtering method

被引：0
|
作者：
Miura, Kenta [1 ]
Omi, Kosuke [1 ]
机构：
[1] Gunma Univ, Grad Sch Sci & Technol, 1-5-1 Tenjin Cho, Kiryu 3768515, Japan
来源：
RESULTS IN PHYSICS | 2024年 / 57卷
关键词：
Tantalum oxide; Aluminum; Thin film; Near-infrared light emission; Co-sputtering;
D O I：
10.1016/j.rinp.2024.107389
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We fabricated aluminum-doped tantalum-oxide (Ta2O5:Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 degrees C without rare-earth elements. The NIR light emission is thought to be due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm, and X-ray diffraction analyses revealed that the origin of the NIR light emission is related to AlTaO4 present in the Ta2O5:Al thin film.
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页数：3
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